X-On Electronics has gained recognition as a prominent supplier of CJL2623 MOSFETs across the USA, India, Europe, Australia, and various other global locations. CJL2623 MOSFETs are a product manufactured by Changjing Electronics Technology. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CJL2623 Changjing Electronics Technology

CJL2623 electronic component of Changjing Electronics Technology
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Part No.CJL2623
Manufacturer: Changjing Electronics Technology
Category: MOSFETs
Description: MOSFET 2 P Channel (Dual) 30V 3A 3V @ 250uA 130 mΩ @ 3A,10V SOT-23-6 RoHS
Datasheet: CJL2623 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.0932 ea
Line Total: USD 0.47 
Availability - 5657
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
5657
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ : 5
Multiples : 5
5 : USD 0.0932
50 : USD 0.0771
150 : USD 0.069
500 : USD 0.0631
3000 : USD 0.0549
6000 : USD 0.0525

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CJL2623 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CJL2623 and other electronic components in the MOSFETs category and beyond.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETs CJL2623 Dual P-Channel MOSFET SOT-23-6L I V R MAX D (BR)DSS DS(on) 130m -10V -3 0 V -3 A 180m -4.5V FEATURE APPLICATION z TrenchFET Power MOSFET z DC/DC converter z Low Gate Charge z Load switch for portable devices z Low On-resistance z Commercial-industrial applications z Surface Mount Package Equivalent Circuit MARKING: 6 1 ABSOLUTE MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V -30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I -3 A D Pulsed Drain Current (note 1) I -20 A DM Power Dissipation (note 2) P 0.35 W D Thermal Resistance from Junction to Ambient R 357 /W JA Junction Temperature T 150 J Storage Temperature T -55~ 150 STG Notes : 1. Pulse width limited by Max.junction temperature. 2.Per element must not be exceeded www.cj-elec.com 1 C,May,2015MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250A -30 V Zero gate voltage drain current IDSS VDS =-30V,VGS = 0V -1 A Gate-body leakage current IGSS VGS =20V, VDS = 0V 100 nA Gate threshold voltage VGS(th) VDS =V , ID =-250A -1 -3 V GS VGS =-10V, ID =-3A 130 m Drain-source on-resistance (note 3) RDS(on) VGS =-4.5V, ID =-2A 180 m Forward tranconductance gFS VDS =-5V, ID =-2A 2 S Diode forward voltage (note 3) V I =-1A, VGS = 0V -1.2 V SD S DYNAMIC PARAMETERS(note 4) Input Capacitance C 240 pF iss Output Capacitance C VDS =-25V,VGS =0V,f =1MHz 42 pF oss pF Reverse Transfer Capacitance C 32 rss SWITCHING PARAMETERS (note 3,4) Turn-on delay time td(on) 5 ns Turn-on rise time tr V =-15V,V =-10V,I =-1A 6 ns DD GS D Turn-off delay time td(off) R =15,R =3.3 15 ns D G Turn-off fall time tf 3 ns nC Total Gate Charge Q 4.5 g Gate-Source Charge Q VDS =-24V,VGS =-4.5V,ID=-2A 0.5 nC gs Gate-Drain Charge Q 1.4 nC gd Notes : 3. Pulse Test : Pulse width 300s, duty cycle2%. 4. Graranted by designnot subject to production testing. www.cj-elec.com 2 C,May,2015

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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Jiangsu Changjing Electronics Technology
Jiangsu Changjing Electronics Technology Co., Ltd.
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