JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4410 N-Channel Power MOSFET I V R MAX D (BR)DSS DS(on) SOP8 13.5 10 m V 7.5A 30V 20m 4.5V DESCRIPTION The CJQ4410 uses advanced trench technology to provide excellent R , shoot-through immunity, body diode characteristics and ultra-low gate DS(ON) resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. APPLICATIONS z Battery Switch z Load Switch MARKING Equivalent Circuit D D D D 8 7 6 5 Q4410 = Device code Solid dot=Pin1 indicator Solid dot = Green molding compound device, if none, the normal device YY=Date Code 1 23 4 S S S G Front side MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Parameter Symbol Limit Unit Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 7.5 A D Pulsed Drain Current I 50 A DM (1) Single Pulsed Avalanche Energy E 72 mJ AS Power Dissipation P 1.4 W D Thermal Resistance from Junction to Ambient R 89 /W JA Junction Temperature T 150 J Storage Temperature Range T -55 ~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10s) T 260 L (1).E condition: V =50V,L=0.5mH, R =25, Starting T = 25C AS DD G J ZZZ FM HOHF FRP 1 G Sep 6T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250A 30 V 1 Zero gate voltage drain current I VDS =30V, VGS =0V A DSS Gate-body leakage current I VDS =0V, VGS =20V 100 nA GSS On characteristics (note1) Gate-threshold voltage VGS(th) VDS =V , ID =250A 1.0 1.3 3.0 V GS VGS =10V, ID =10A 9 13.5 m Static drain-source on-sate resistance RDS(on) VGS =4.5V, ID =5A 12 20 m Forward transconductance g VDS =15V, ID =5A 8 S FS Dynamic characteristics (note 2) Input capacitance C 9130 iss VDS =15V,VGS =0V, Output capacitance C 625 pF oss f =1MHz Reverse transfer capacitance C 387 rss Switching characteristics (note 2) Total gate charge Q 40 g V =15V, V =10V, DS GS nC Gate-source charge Q 5.5 gs I =10A D Gate-drain charge Q 3.7 gd Turn-on delay time td 15 (on) V =25V,ID=1A, DD Turn-on rise time tr 15 V =10V,R =6, ns GS G Turn-off delay time td(off) 60 R =25 L Turn-off fall time tf 25 f =1MHz, V =0V, DS Gate Resistance R 0.2 0.8 g V =0V, GS Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) V VGS =0V, I =2.3A 1.1 V SD S Continuous drain-source diode forward I 7.5 A S current Pulsed drain-source diode forward current I 50 A SM Notes: 1. Pulse Test : Pulse Width300s, duty cycle 2%. 2. Guaranteed by design, not subject to production. ZZZ FM HOHF FRP 2 G,Sep,2016 026)(7 (/(&75,& / &+ 5 &7(5,67,&6