JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435 P-Channel Power MOSFET I V R MAX D (BR)DSS DS(on) SOP8 24 m -10V -9.1A -30V 35m -4.5 V DESCRIPTION The CJQ4435 uses advanced trench technology to provide excellent R , shoot-through immunity, body diode characteristics and ultra-low gate DS(on) resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. AP PLICATIONS z Battery Switch z Load Switch MARKING Equivalent Circuit Q4435= Device cod e DDDD 8 7 6 5 Solid dot=Pin1 indicator Solid dot = Green molding compound device, if none, the normal device YY=Date Code 12 3 4 SSGS Front side MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Parameter Symbol Limit Unit Drain-Source Voltage V -30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I -9.1 A D Pulsed Drain Current I -36 A DM (1) Single Pulsed Avalanche Energy E 20 mJ AS Power Dissipation P 1.4 W D Thermal Resistance from Junction to Ambient R 89 /W JA Junction Temperature T 150 J Storage Temperature Range T -55 ~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10s) T 260 L (1).E condition: V =-50V,L=0.5mH, R =25, Starting T = 25C AS DD G J www.cj-elec.com 1 F,Mar,2016T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-250A -30 V -1 Zero gate voltage drain current I VDS =-30V, VGS =0V A DSS 100 Gate-body leakage current I VDS =0V, VGS =20V nA GSS On characteristics (note1) Gate-threshold voltage VGS(th) VDS =V , ID =-250A -1.0 -1.5 -3.0 V GS VGS =-10V, ID =-9.1A 24 m 14 Static drain-source on-sate resistance RDS(on) VGS =-4.5V, ID =-6.9A 23 35 m 20 Forward transconductance g VDS =-10V, ID =-9.1A S FS Dynamic characteristics (note 2) Input capacitance C 1350 iss VDS =-15V,VGS =0V, Output capacitance C 215 pF oss f =1MHz Reverse transfer capacitance C 185 rss Switching characteristics (note 2) V =-15V, V =-10V, DS GS 50 I =-9.1A Total gate charge Q D g 25 nC V =-15V, V =-4.5V, DS GS Gate-source charge Q 4 gs I =-9.1A D Gate-drain charge Q 7.5 gd Turn-on delay time td 15 (on) V =-15V,ID=-1A, DD Turn-on rise time tr 15 V =-10V,R =1, ns GS G Turn-off delay time td(off) 70 R =15 L Turn-off fall time tf 25 f =1MHz, V =0V, DS Gate Resistance R 5.8 g V =0V, GS Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) V VGS =0V, I =-2A -1.2 V SD S Continuous drain-source diode forward I -9.1 A S current Pulsed drain-source diode forward current I -36 A SM Notes: 1. Pulse Test : Pulse Width300s, duty cycle 2%. 2. Guaranteed by design, not subject to production testing. www.cj-elec.com 2 F,Mar,2016 026)(7 (/(&75,& / &+ 5 &7(5,67,&6