JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ7328 Dual P-Channel MOSFET SOP8 I V R MAX D (BR)DSS DS(on) 21m -10V -30V -8A 32m -4.5V DESCRIPTION The CJQ7328 uses advanced processing techniques to achieve extremely low on-resistance. This benefit, combined with the ruggedized device design that the MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. FEATURES Ultra Low On-Resistance Equivalent Circuit MARKING: Q7328= Device code YY=Date Code Solid dot = Pin1 indicator Solid dot = Green molding compound device, if none,the normal device. Maximum ratings (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V -30 DS V Gate-Source Voltage V 20 GS Continuous Drain Current I -8 D A Pulsed Drain Current (note 1) I -32 DM Power Dissipation (note 2) P 1.4 W D Thermal Resistance from Junction to Ambient (note 2) R 89 /W JA Junction Temperature T 150 J Storage Temperature T -55 ~+150 stg www.cj-elec.com 1 E,Mar,2016T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Static Characteristics Drain Source Breakdown Voltage V VGS=0V,ID=-250A -30 V (BR)DSS Zero Gate Voltage Drain Current I VDS=-24V, VGS=0V -15 A DSS Gate body Leakage l VDS=0V, VGS=20V 100 nA GSS Gate Threshold Voltage VGS(th) VDS =V , ID =-250A -1 -1.5 -2.5 V GS Drain-Source on-state Resistance VGS =-10V, ID =-8A 19 21 R m DS(on) (note 3) VGS =-4.5V, ID =-6.8A 26 32 Forward Transconductance g V =-10V, I =-8A 12 S DS D Fs Dynamic Characteristics (note 4) Input Capacitance C 2675 iss Output Capacitance C VDS =-25V,VGS =0V,f =1MHz 409 pF oss Reverse Transfer Capacitance C 262 rss Total Gate Charge Q 78 g VDS =-15V,VGS =-10V,ID =-8A nC Gate-Source Charge Q 9.8 gs Gate-Drain Charge Q 8.3 gd Turn-On Delay Time td 20 (on) Rise Time tr 23 V =-15V,R =15 DD D ns I =-1A,V =-10V,R =6 D GS G Turn-Off Delay Time td(off) 297 Fall Time tf 147 Drain-Source Body Diode Characteristics Diode Forward Voltage (note 3) V I =-2A,V =0V -1.2 V SD S GS Notes: 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on 11 FR4 board,t 10s. 3. Pulse Test : Pulse Width300s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production testing. www.cj-elec.com 2 E,Mar,2016 026)(7 (/(&75,& / &+ 5 &7(5,67,&6