JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ9435 P-Channel Power MOSFET I V R MAX D (BR)DSS DS(on) SOP8 60 m -10V -30V -5.1A 70 m -6V 105m -4.5V DESCRIPTION The CJQ9435 uses advanced trench technology to provide excellent R , shoot-through immunity, body diode characteristics and ultra-low gate DS(ON) resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. APPLICATIONS z Battery Switch z Load Switch Equivalent Circuit MARKING: DDDD 8 7 6 5 Q9435= Device code YY=Date Code Solid dot = Pin1 indicator Solid dot = Green molding compound device, if none,the normal device. 1 234 SSGS MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Parameter Symbol Limit Unit Drain-Source Voltage V -30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I -5.1 A D Pulsed Drain Current I -20 A DM (1) Single Pulsed Avalanche Energy E 20 mJ AS Power Dissipation P 1.4 W D Thermal Resistance from Junction to Ambient R 89 /W JA Junction Temperature T 150 J Storage Temperature Range T -55 ~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10s) T 260 L (1).E condition: V =-50V,L=0.5mH, R =25, Starting T = 25C AS DD G J 1 I Mar 6 T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-250A -30 V -1 Zero gate voltage drain current I VDS =-24V, VGS =0V A DSS 100 Gate-body leakage current I VDS =0V, VGS =20V nA GSS On characteristics (note1) Gate-threshold voltage VGS(th) VDS =V , ID =-250A -1.0 -1.5 -2.0 V GS VGS =-10V, ID =-4.6A 50 60 m Static drain-source on-sate resistance RDS(on) VGS =-6V, ID =-4.1A 60 70 m VGS =-4.5V, ID =-2A 65 105 m 5 Forward transconductance g VDS =-15V, ID =-4.6A S FS Switching characteristics (note 2) Total gate charge Q 40 g V =-15V, V =-10V, DS GS Gate-source charge Q 4 nC gs I =-4.6A D Gate-drain charge Q 6.3 gd Turn-on delay time td 30 (on) V =-15V,ID=-1A, DD Turn-on rise time tr 60 V =-10V,R =6, ns GS G Turn-off delay time td(off) 120 R =15 L Turn-off fall time tf 100 f =1MHz, V =0V, DS Gate Resistance R 5.8 g V =0V, GS Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) V VGS =0V, I =-2.6A -1.2 V SD S Continuous drain-source diode forward I -5.1 A S current Pulsed drain-source diode forward current I -20 A SM Notes: 1. Pulse Test : Pulse Width300s, duty cycle 2%. 2. Guaranteed by design, not subject to production testing. 2 I Mar 6