JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA14 TRANSISTOR (NPN) Unit : mm FEATURES 1. BASE Darlington Amplifier 2. EMITTER 3. COLLECTOR Marking : K3D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V 30 V CBO Collector-Base Voltage V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current -Continuous 0.3 A C P Collector Power Dissipation 300 mW C Thermal Resistance from Junction to Ambient 417 R /W JA T Junction Temperature 150 J T Storage Temperature -55~+150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V I = 100A,I =0 30 V (BR)CBO C E Collector-emitter breakdown voltage V I = 100A, I=0 30 V (BR)CEO C B Emitter-base breakdown voltage V 10 V (BR)EBO I = 100A, I =0 E C Collector cut-off current I* V =30 V, I=0 0.1 CBO CB E A Emitter cut-off current I* V = 10V ,I=0 A 0.1 EBO EB C h * FE(1) V =5V, I = 10mA 10000 CE C DC current gain h * FE(2) V =5V, I = 100mA 2 00 00 CE C Collector-emitter saturation voltage V * I =100mA, I=0.1mA 1.5 V CE (sat) C B Base-emitter saturation voltage V * I =100mA, I=0.1mA 2 V BE (sat) C B Base-emitter voltage V* V =5V,I = 100mA 2.0 V BE CE C V =5V, I = 10mA CE C Transition frequency f 125 MHz T f=100MHz Collector output capacitance C V =10V,I=0,f=1MHz 12 pF ob CB E * Pulse Test : pulse width 300s,duty cycle 2%. B,Nov,2011Typical Characteristics MMBTA14 h I Static Characteristic FE C 120 300K COMMON COMMON EMITTER EMITTER V =5V CE 2uA T =25 100 a 100K T =100 a 1.8uA 80 1.6uA T =25 a 1.4uA 60 1.2uA 10K 1uA 40 0.8uA 0.6uA 20 0.4uA I = 0.2uA B 0 1K 01 23 45 67 1 10 100 300 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE V (V) C CE V V I I BEsat CEsat C C 2000 1000 1500 800 T =25 a T =25 a 1000 600 T =100 a T =100 a =1000 =1000 500 400 300 1 10 100 300 1 10 100 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V C /C V /V C BE ob ib CB EB 300 20 f=1MHz I =0/I =0 E C 100 T =25 a 10 C ib 10 C ob 1 COMMON EMITTER V =5V CE 0.1 1 0.0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 20 REVERSE VOLTAGE V (V) BASE-EMMITER VO LTAGE V (V) BE P T f I C a T C 350 200 300 100 250 200 150 100 COMMON EMITTER 50 V =5V CE T =25 a 0 10 0 25 50 75 100 125 150 3 10 100 AMBIENT TEMPERATURE T ( ) a COLLECTOR CURRENT I (mA) C B,Nov,2011 T =100 a T =25 a COLLECTOR-EMITTER SATURATION COLLECTOR CURRENT I (mA) C TRANSITION FREQUENCY f (MHz) VOLTAGE V (mV) COLLECTOR CURRENT I (mA) T CEsat C BASE-EMITTER SATURATION COLLECTOR POWER DISSIPATION VOLTAGE V (mV) CAPACITANCE C (pF) BEsat DC CURRENT GAIN h P (mW) T FE C