JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs UM6K1N Dual N-channel MOSFET I V R MAX D (BR)DSS DS(on) SOT-363 8 4 V 3 0 V 100mA 13 2.5V FEATURE 1) Two 2SK3018 transistors in a package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half. 4) Low On-resistance. 5) Low voltage drive (2.5V drive) makes this device ideal for portable equipment. Equivalent Circuit MARKING MOSFET MAXIMUM RATINGS (Ta = 25C unless otherwise noted) Symbol Parameter Value Unit VDS V Drain-Source Voltage 30 VGS Gate-Source Voltage 20 V ID Continuous Drain Current 0.1 A PD Power Dissipation 0.15 W RJA Thermal Resistance from Junction to Ambient 833 /W TJ Junction Temperature 150 Storage Temperature -55~+150 Tstg Rev. - 1.0 www.jscj-elec.com 1 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage VDS VGS = 0V, ID = 10A 30 V Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V 1 A Gate Source leakage current IGSS VGS =20V, VDS = 0V 2 A Gate Threshold Voltage VGS(th) VDS = 3V, ID =100A 0.8 1.2 V 1.5 VGS = 4V, ID =10mA 4 8 Drain-Source On-Resistance RDS(on) VGS =2.5V,ID =1mA 6 13 Forward Transconductance gFS VDS =3V, ID = 10mA 20 mS Dynamic Characteristics* Input Capacitance Ciss 13 pF Output Capacitance Coss VDS =5V,VGS =0V,f =1MHz 9 pF Reverse Transfer Capacitance Crss 4 pF Switching Characteristics* Turn-On Delay Time td(on) 15 ns Rise Time tr 35 ns VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 Turn-Off Delay Time td(off) 80 ns Fall Time tf 80 ns *These parameters have no way to verify. www.jscj-elec.com Rev. - 1.0 2