The CED20P10 MOSFET P Trench 100V 16A (Tc) 4V@250uA 130 mO@8A, 10V TO-251(I-PAK) RoHS is an N-channel power field effect transistor (FET), manufactured by Chino-Excel, intended for use in high frequency switching regulation applications, where standard MOSFETs are limited by capacitive cross-talk issues. This device includes a trench technology, which operates at higher frequency enablig high and fast switching speeds, improved gate charging and discharging characteristics, improved ESD performance and lower overall power losses. It has a drain to source voltage rating (VDS) of 100V, drain current rating (ID) of 16A (Tc) and has a low on-resistance (Rds) of 130 mO @ 8A, 10V. Its gate threshold voltage (VGS) is 4V @ 250uA. The package is TO-251 (I-PAK) RoHS.