X-On Electronics has gained recognition as a prominent supplier of 1N4148-G Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. 1N4148-G Diodes - General Purpose, Power, Switching are a product manufactured by Comchip. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

1N4148-G Comchip

1N4148-G electronic component of Comchip
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See Product Specifications
Part No.1N4148-G
Manufacturer: Comchip
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching VR=100V, IF=150mA
Datasheet: 1N4148-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5000: USD 0.0009 ea
Line Total: USD 4.5 
Availability - 1940
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
1940
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 5000
Multiples : 5000
5000 : USD 0.0009

6082
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1704
10 : USD 0.1033
100 : USD 0.0469
1000 : USD 0.0362
5000 : USD 0.0268
10000 : USD 0.0228
25000 : USD 0.0214
100000 : USD 0.0188

1940
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 0.0052

58200
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 5000
Multiples : 5000
5000 : USD 0.1085
30000 : USD 0.0991
45000 : USD 0.0922
60000 : USD 0.0869

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Operating Temperature Range
Mxhts
Subcategory
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We are delighted to provide the 1N4148-G from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N4148-G and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Switching Diode 1N4148-G Voltage: 100V Current: 0.15A RoHS Device DO-35 Features -Surge overload ratings to 2 amperes peak. 1.02(26.00) Min. -Ideal for printed circuit board. Mechanical data 0.165(4.20) Max. -Case: Glass, DO-35 0.079(2.00) Max. -Lead: Axial leads,solderable per MIL-STD-202, Method 208 guaranteed. 1.02(26.00) Min. T- erminal:Pure tin plated lead free. -Polarity:Indicated by cathode band. 0.02(0.52)Typ. -Mounting Position: Any -Weight: 0.13gram Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load derate current by 20%. Symbol Parameter Value Unit Maximum Repetitive Peak Voltage VRRM 100 V Maximum RMS Voltage VRMS 75 V Forward Repetitive Peak Current IFSM 500 mA Maximum Average Forward Current IF(AV) 150 mA Peak Forward Surge Current tp=1uS IFSN 2.0 A Typical Resistance Junction to Amvient Air R JA 350 K/W (Note 1) Operating and Storage Temperature Rang TJ,TSTG -65 to +200 C Symbol Typ. Parameter Max Unit Min Forward Voltage at IF = 10 mA VF 1 V Leakage Current at VR= 20 V IR 25 nA uA at VR= 75 V IR 5 at VR= 20 V,TJ = 150C uA IR 50 Reverse Recovery Time( Note 2) Trr 4. ns NTOES: (1) Thermal Resistance Junction to Ambient Air. (2) Reverse Recovery Test Conditions: IF=10mA,VR=6V,Irr=0.1 X IR,RL=100. REV:A QW-B0050 Page 1 Comchip Technology CO., LTD.Switching Diode RATING AND CHARACTERISTIC CURVES (1N4148-G) Fig.1 - Ma xi mu m Forward Current Fig.2 - Maximum Non-Repetitive Fo rw a rd Derating Curve S u rg e C u rre n t P e r B ri d g e E l e l me n t 250 3.5 8.3ms Single Half Sine Wave JEDEC Method 3.0 200 2.5 150 2.0 1.5 100 1.0 50 0.5 0 0 0 100 200 1 10 100 Ambient Temperature, (C) Number of Cycles at 60 Hz Fig.3 - Typical Instantaneous Forward Fig.4 - Typical Reverse Characteristics Characteristics Per Bridge Element Per Bridge Element 1000 100 TJ=150 C 100 10 TJ=150 C TJ=100C 10 1.0 TJ=25 C 1.0 0.1 TJ=25C 0.1 0.01 0.3 0 .5 0.7 0.9 1.1 1.3 0 20 40 60 80 100 120 140 Instantaneous Forward Voltage, (V) Percent of Rated Peak Reverse Voltage, (%) Fig.5 - Reverse Recover Time Characteristics and Test Circuit Diagarm trr 50 W 10W +0.5A NONINDUCTIVE NONINDUCTIVE 0 (+) ( ) D.U.T. 50Vdc PULSE -0.25A (approx.) GENERATOR (NOTE 2) ( ) (+) 1 W OSCILLISCOPE NON- (NOTE 1) INDUCTIVE -1.0A NOTES: 1. Rise Time= 7ns max. Input Impedance= 1 megohm.22pF. 1cm 2. Rise Time= 10ns max. Source Impedance= 50 ohms. SET TIME BASE FOR 50 / 10ns / cm REV:A QW-B0050 Page 2 Comchip Technology CO., LTD. Instantaneoys Forward Current, (mA) Average Forward Current, (mA) Peak Forward Surge Current, (A) Instantaneous Reverse Current, (uA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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