X-On Electronics has gained recognition as a prominent supplier of 2N7002-HF MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002-HF MOSFETs are a product manufactured by Comchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7002-HF Comchip

2N7002-HF electronic component of Comchip
2N7002-HF Comchip
2N7002-HF MOSFETs
2N7002-HF  Semiconductors

Images are for reference only
See Product Specifications
Part No. 2N7002-HF
Manufacturer: Comchip
Category: MOSFETs
Description: N-Channel 60 V 250mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
Datasheet: 2N7002-HF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2962 ea
Line Total: USD 0.3 
Availability - 7305
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7305
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 0.2962
10 : USD 0.1838
100 : USD 0.0768
500 : USD 0.0701
3000 : USD 0.0506
9000 : USD 0.0385

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Cnhts
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the 2N7002-HF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002-HF and other electronic components in the MOSFETs category and beyond.

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MOSFET 2N7002-HF (N-Channel) RoHS Device Halogen Free SOT-23 Features 0.119(3.00) -Power dissipation : 0.35W 0.110(2.80) D Equivalent Circuit 0.056(1.40) 0.047(1.20) D G S 0.083(2.10) 0.066(1.70) 0.006(0.15) G : Gate 0.002(0.05) S : Source G 0.044(1.10) 0.103(2.60) D : Drain 0.035(0.90) 0.086(2.20) S 0.006(0.15)max 0.020(0.50) 0.013(0.35) Maximum Ratings (at TA=25C) 0.007(0.20)min Symbol Parameter Value Unit Drain-Source voltage VDS 60 V Dimensions in inches and (millimeter) Drain current ID 250 mA Power dissipation PD 350 mW Junction and storage temperature TJ, TSTG -55 ~ +150 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit Drain-Source breakdown voltage VGS=0V, ID=10 A V(BR)DSS 60 70 V Gate-Threshold voltage VDS=VGS, ID=250 A Vth(GS) 1 1.5 2.5 Gate-body leakage VDS=0V, VGS=15V IGSS 10 nA VDS=60V, VGS=0V 1 A Zero gate voltage drain current IDSS VDS=60V, VGS=0V, TJ=125C 500 800 1300 VGS=10V, VDS=7.5V On-state drain current ID(ON) mA 700 VGS=4.5V, VDS=10V 500 VGS=10V, ID=250mA 1.5 3 Drain-Source on resistance rDS(ON) 2.0 4 VGS=4.5V, ID=200mA mS Forward tran conductance gts VDS=15V, ID=200mA 300 V Diode forward voltage VSD 0.85 1.2 IS=200mA, VGS=0V Total gate charge Qg 0.6 1.0 nC Gate-Source charge Qgs 0.06 VDS=30V, VGS=10V, ID=250mA Gate-Drain charge Qgd 0.06 Input capacitance Ciss 25 pF Output capacitance COSS 6 VDS=25V, VGS=0V, f=1MHz Reverse transfer capacitance CrSS 1.2 td(ON) 7.5 20 Turn-on time VDD=30V, RL=200 nS tr 6 ID=100mA, VGEN=10V RG=10 Turn-off time 7.5 td(off) 20 REV:B QW-JTR03 Page 1 Comchip Technology CO., LTD.MOSFET RATING AND CHARACTERISTIC CURVES (2N7002-HF) Fig.1 On-Region Characteristics Fig.2 On-Resistance vs Drain Current 1.0 7 O VGS=10V T = 25C J 9.0V 8.0V 6 7.0V 0.8 6.5V VGS = 5.0V 6.0V 4.5V 5 4.0V 3.5V 5.5V 0.6 3.0V 4 2.5V 2.0/1.0V 5.0V VGS = 10V 3 0.4 2 0.2 1 0 0 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 VDS, Drain-Source Voltage(V) ID, Drain Current (A) Fig.3 On-Resistance vs Junction Temperature Fig.4 On-Resistance vs Gate-Source Voltage 2.0 6 5 1.5 VGS=10V, ID=0.5A 4 ID = 500mA VGS=5V, ID=0.05A 1.0 3 ID = 50mA 2 0.5 1 0 0 -55 -30 -5 20 45 70 95 120 145 0 2 4 6 8 10 12 14 16 18 O TJ, Junction Temperature ( C) VGS, Gate to Source Voltage (V) REV:B QW-JTR03 Page 2 Comchip Technology CO., LTD. RDS(ON), Normalized Drain-Source ID, Drain-Source Current (A) On-Resistance RDS(ON), Normalized RDS(ON), Normalized Drain-Source On-Resistance Drain-Source On-Resistance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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