A Product Line of Diodes Incorporated DMN3024LK3 30V TO252 (DPAK) N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance I D V R Fast switching speed (BR)DSS DS(on) T = 25C A Low gate drive 24m V = 10V 14.4A GS Green component and RoHS compliant (Note 1) 30V 39m V = 4.5V 11.6A GS Mechanical Data Case: TO-252 (DPAK) Description and Applications Case Material: Molded Plastic, Green Molding Compound. UL This new generation MOSFET has been designed to minimize the on- Flammability Classification Rating 94V-0 (Note 1) state resistance (R ) and yet maintain superior switching DS(on) Moisture Sensitivity: Level 1 per J-STD-020D performance, making it ideal for high efficiency power management applications. Terminals Connections: See Diagram Terminals: Matte Tin Finish annealed over Copper leadframe. Backlighting Solderable per MIL-STD-202, Method 208 DC-DC Converters Marking Information: See Below Power management functions Ordering Information: See Below Weight: 0.33 grams (approximate) D D G D GS S Equivalent Circuit TOP VIEW PIN OUT -TOP VIEW Ordering Information (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN3024LK3-13 N3024L 13 16 2,500 Note: 1. Diodes, Inc. defines Green products as those which are Eu RoHS compliant and contain no halogens or antimony compounds further information about Diodes Inc.s Green Policy can be found on our website. For packaging details, go to our website. Marking Information = Manufacturers Marking N3024L = Product Type Marking Code YYWW YYWW = Date Code Marking YY = Year (ex: 09 = 2009) N3024L WW = Week (01-52) 1 of 8 June 2009 DMN3024LK3 Diodes Incorporated www.diodes.com Document Revision: 1 A Product Line of Diodes Incorporated DMN3024LK3 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source voltage V 30 V DSS Gate-Source voltage V 20 V GS (Note 3) 14.4 Continuous Drain current V = 10V T =70C (Note 3) I 12.0 A GS A D (Note 2) 9.78 Pulsed Drain current V = 10V (Note 4) I 46.5 A GS DM Continuous Source current (Body diode) (Note 3) I 12 A S Pulsed Source current (Body diode) (Note 4) 46.5 A I SM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit 4.1 (Note 2) 32.5 Power dissipation 8.9 W (Note 3) P D Linear derating factor 71.4 mW/C 2.17 (Note 5) 17.4 (Note 2) 30.8 Thermal Resistance, Junction to Ambient (Note 3) R 14.0 JA C/W (Note 5) 57.6 Thermal Resistance, Junction to Lead (Note 6) 2.24 R JL Operating and storage temperature range T , T -55 to 150 C J STG Notes: 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions the device is measured when operating in a steady-state condition. 3. Same as note 2, except the device is measured at t 10 sec. 4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 8 June 2009 DMN3024LK3 Diodes Incorporated www.diodes.com Document Revision: 1