MOSFET 2N7002KDW-HF N-Channel RoHS Device Halogen Free Features SOT-363 - High density cell design for low RDS(ON). - Voltage controlled small signal switch. 0.087(2.20) 0.079(2.00) - High saturation current capability. 6 5 4 - ESD protected. 0.053(1.35) 0.045(1.15) 1 2 3 0.055(1.40) Mechanical data 0.047(1.20) 0.006(0.15) - Case: SOT-363, molded plastic. 0.004(0.10) 0.039(1.00) - Epoxy: UL 94V-0 ammability rating. 0.035(0.90) 0.094(2.40) 0.085(2.15) Circuit Diagram 0.014(0.35) 0.018(0.46) 0.004(0.10) 0.006(0.15) 0.000(0.00) 0.010(0.26) 6 5 4 Dimensions in inches and (millimeter) D1 G2 S2 S1 G1 D2 1 2 3 Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Drain-Source voltage VDS 60 V Gate-Source voltage 20 VGS V Drain current ID 340 mA Total power dissipation PD 150 mW Thermal resistance from junction to ambient R JA 820 C/W Junction temperature TJ 150 C Storge temperature range TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:A SP-JTR49 Page 1 Comchip Technology CO., LTD.MOSFET Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Static Characteristics Drain-Source breakdown voltage VGS = 0V, ID = 250 A V(BR)DSS 60 V V Gate-Threshold voltage (Note 1) VDS = VGS, ID = 1mA VGS(th) 1 2.5 V Gate-body leakage VDS = 0V, VGS = 20V A IGSS 10 Zero gate voltage drain current VDS = 48V, VGS = 0V IDSS 1 A VGS = 4.5V, ID = 200mA 5.3 Drain-Source on-resistance (Note 1) RDS(ON) VGS = 10V, ID = 500mA 5 Diode forward voltage (Note 1) VGS = 0V, IS = 300mA VSD 1.5 V VGS = 0V, IS = 300mA, VR = 25V Recovered charge Qr 30 nC dls/dt = -100A/s Dynamic Characteristics Input capacitance pF Ciss 40 Output capacitance pF VDS = 10V, VGS = 0V, f = 1MHz Coss 30 Reverse transfer capacitance pF Crss 10 Switching Characteristics Turn-on delay time td(on) ns 10 VDD = 50V, VGS = 10V, RL = 250 RGS = 50, RGEN= 50 Turn-o delay time td(o) ns 15 VGS = 0V, IS = 300mA, VR = 25V Reverse recovery time trr 30 ns dls/dt = -100A/s Gate-Source Zener Diode Gate-Source breakdown voltage Igs = 1mA (open drain) BVGSO 21.5 30 V Notes: 1. Pulse test: Pulse width 300s, duty cycle 2%. Company reserves the right to improve product design , functions and reliability without notice. REV:A SP-JTR49 Page 2 Comchip Technology CO., LTD.