MOSFET 2N7002W-G (N-Channel) RoHS Device V(BR)DSS RDS(on)MAX ID SOT-323 5 10V 60V 115mA 0.087(2.20) 0.079(2.00) 7 5V 3 D 0.053(1.35) 0.045(1.15) 1 2 G S 0.055(1.40) Features 0.047(1.20) - High density cell design for low RDS(ON). 0.006(0.15) 0.003(0.08) - Voltage controlled small signal switch. - Rugged and reliable. 0.096(2.45) 0.039(1.00) 0.085(2.15) 0.035(0.90) - High saturation current capability. Mechanical data 0.004(0.10)max. 0.016(0.40) 0.018(0.46) 0.008(0.20) 0.010(0.26) - Case: SOT-323, molded plastic. - Terminals: Solderable per MIL-STD-750, Dimensions in inches and (millimeter) method 2026. - Weight: 0.006 grams(approx.) Equivalent Circuit 3 D 1. G : Gate 2. S : Source 1 3. D : Drain G S 2 Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Conditions Value Unit Drain-Source voltage VDS 60 V Gate-Source voltage VGS 20 V Continuous drain current ID 115 mA Power dissipation PD 200 mW Thermal resistance Junction to ambient R JA 625 C/W Junction temperature range TJ -55 to +150 C Storage temperature range TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR25 Page 1 Comchip Technology CO., LTD.MOSFET Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Drain-source breakdown voltage VGS=0V, ID=250A VBR(DSS) 60 V Gate-threshold voltage VDS=VGS, ID=250 A Vth(GS) 1 1.6 2.5 V Gate-body leakage VDS=0V, VGS=20V IGSS 80 nA Zero gate voltage drain current VDS=60V, VGS=0V IDSS 80 nA On-state drain current VGS=10V, VDS=7V ID(ON) 500 mA VGS=10V, ID=500mA 0.9 5 RDS(ON) Drain-source on resistance VGS=5V, ID=50mA 1.1 7 gfs Forward trans conductance VDS=10V, ID=200mA 80 mS VGS=10V, ID=500mA 3.75 Drain-source on-voltage VDS(ON) V VGS=5V, ID=50mA 0.375 Diode forward voltage IS=115mA, VGS=0V VSD 0.55 1.2 V Input capacitance * Ciss 50 Output capacitance * VDS=25V, VGS=0V, f=1MHz 25 pF Coss Reverse transfer capacitance * Crss 5 Switching Time td(on) Turn-on time * 20 VDD=25V, RL=50 , ID=500mA, nS VGEN=10V, RG=25 td(off) Turn-off time * 40 Note: * These parameters have no way to verify Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR25 Page 2 Comchip Technology CO., LTD.