MOSFET A2N7002HW-HF N-Channel RoHS Device Halogen Free Features - Low on-resistance. SOT-323 1: Gate - ESD protected gate up to 2KV HBM. 2: Source 3: Drain - High-speed switching. 0.087(2.20) 0.079(2.00) - Drive circuits can be simple. 3 - Parallel use is easy. 0.053(1.35) 0.045(1.15) - AEC-Q101 Qualied. 1 2 0.055(1.40) 0.047(1.20) Mechanical data - Case: SOT-323, molded plastic. 0.006(0.15) 0.002(0.05) - Molding compound, UL ammability classication 0.004(0.10) 0.094(2.40) 0.001(0.02) rating 94V-0. 0.087(2.20) - Terminals: Matte tin plated leads, solderable per 0.043(1.10) 0.035(0.90) MIL-STD-202, method 208. 0.014(0.35) 0.016(0.40) 0.010(0.25) 0.006(0.15) Circuit Diagram Dimensions in inches and (millimeter) Drain Gate Source Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS 20 V Continuous drain current ID 300 mA Pulsed drain current (Note 4) tp = 10s IDM 2000 mA Power dissipation PD 0.25 W Thermal resistance junction to ambient air R JA 500 C/W Thermal resistance junction to lead R JL 313 C/W Thermal resistance junction to case R JC 261 C/W Operating junction temperature range TJ -55 to +150 C Storage temperature range TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-JTR12 Page 1 Comchip Technology CO., LTD.MOSFET Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit O Characteristics Drain-source breakdown voltage VGS = 0V, ID = 250A VDSS 60 V Drain-source leakage current VDS = 60V, VGS = 0V A IDSS 1 Gate-body leakage A IGSS VGS = 20V, VDS = 0V 10 On Characteristics (Note 2) VGS = 5V, ID = 0.05A 1.5 3 RDS(ON) Static drain-source on resistance VGS = 10V, ID = 0.5A 1.45 2.5 V Gate threshold voltage VGS(th) VDS = VGS, ID = 250A 1 1.5 2.5 Dynamic Characteristics (Note 3) Input capacitance Ciss 41 Output capacitance Coss VGS = 0V, VDS = 20V, f = 1MHZ 15 pF Reverse transfer capacitance Crss 4 Switching Characteristics (Note 3) Turn-on delay time td(on) 6 VDD = 30V, ID = 0.2A, Turn-on rise time tr 5 VGS = 10V, RG = 25, nS Turn-o delay time td(o) 25 RL = 150 Turn-o fall time tf 15 Drain-Source Diode Characteristics Diode forward voltage (Note 1) IS = 0.3A, VGS = 0V VSD 0.85 1.2 V Diode continuous forward current TC =25C IS 0.3 A Notes: 1. Surface mounted on FR4 board, t 10 sec. 2. Pulse width 300s, duty cycle 2%. 3. Guaranteed by design, not subject to production. 4. Pulse width limited by maximum junction temperature. Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-JTR12 Page 2 Comchip Technology CO., LTD.