MOSFET ACMSN2312T-HF N-Channel RoHS Device Halogen Free Features - Advanced trench process technology. SOT-23 1 : Gate - Lower on-resistance. 2 : Source 0.122(3.10) 3 : Drain - Reliable and rugged. 0.106(2.70) 3 - Electrostatic sensitive devices. 0.059(1.50) - AEC-Q101 Qualied. 0.043(1.10) 1 2 0.079(2.00) 0.071(1.80) 0.006(0.15) Mechanical data 0.002(0.05) 0.102(2.60) 0.043(1.10) - Case: SOT-23, molded plastic. 0.087(2.20) 0.035(0.90) 0.004(0.10) 0.001(0.02) 0.020(0.50) 0.019(0.48) 0.012(0.30) 0.014(0.35) Circuit Diagram Dimensions in inches and (millimeter) D G S Maximum Ratings (at Ta=25C unless otherwise noted) Symbol Parameter Value Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 8 V Maximum drain current ID 4.9 A Pulsed drain current IDM 15 A Power dissipation PD 0.75 W Thermal resistance, junction to ambient (PCB mounted) R JA 140 C/W Operating junction and storage temperature range TJ, TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-JTR19 Page 1 Comchip Technology CO., LTD.MOSFET Electrical Characteristics (at Ta=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Drain-source breakdown voltage VGS = 0V, ID = 250A V(BR)DSS 20 V Gate threshold voltage VGS(th) VDS = VGS, ID = 250A 0.4 1.2 V gfs VDS = 15V, ID = 5A Forward transconductance 40 S VDS = 0V , VGS = 8V 100 Gate-body leakage IGSS nA VDS = 0V , VGS = -8V -100 Zero gate voltage drain current VDS = 20V, VGS = 0V A IDSS 1 VGS = 4.5V, ID = 5A 21 31 Drain-source on resistance RDS(on) VGS = 2.5V, ID = 4.5A 24 37 m VGS = 1.8V, ID = 4A 50 85 Drain forward voltage VSD VGS = 0V, IS = 1.8A 1.2 V Total gate charge Qg 11.2 14 Gate-source charge Qgs VDS = 10V, VGS = 4.5V, ID = 5A 1.4 nC Gate-drain charge Qgd 2.2 Input capacitance Ciss 500 Output capacitance VDS = 8V, VGS = 0V, f = 1MHZ pF Coss 300 Reverse transfer capacitance Crss 140 Turn-on delay time td(on) 15 25 tr 60 Rise time 40 VDD = 10V, ID = 1A, RG = 6, nS VGEN = 4.5V, RL = 10 Turn-o delay time td(o) 48 70 Fall time tf 31 45 Max. diode forward current IS 1.7 A Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-JTR19 Page 2 Comchip Technology CO., LTD.