MOSFET ACMSP2303T-HF P-Channel RoHS Device Halogen Free Features - Electrostatic sensitive devices. SOT-23 - VDS (V) = -30V. 1 : Gate 2 : Source 0.122(3.10) - ID = -2.7A (VGS = -10V) 3 : Drain 0.106(2.70) - RDS(ON) < 190m (VGS = -10V) 3 RDS(ON) < 330m (VGS = -4.5V) 0.059(1.50) 0.043(1.10) - AEC-Q101 Qualied. 1 2 0.079(2.00) 0.071(1.80) 0.006(0.15) Mechanical data 0.002(0.05) 0.102(2.60) 0.043(1.10) - Case: SOT-23, molded plastic. 0.087(2.20) 0.035(0.90) 0.004(0.10) 0.001(0.02) Circuit Diagram 0.020(0.50) 0.019(0.48) 0.012(0.30) 0.014(0.35) Drain Dimensions in inches and (millimeter) Gate Source Maximum Ratings (at Ta=25C unless otherwise noted) Symbol Parameter Value Unit Drain-source voltage VDSS -30 V Gate-source voltage VGSS 20 V TC = 25C -2.7 Continuous drain current ID A TC = 70C -2.2 Pulsed drain current IDM -10 A TC = 25C 2.3 TC = 70C 1.5 Power dissipation PD W TA = 25C 1.0 TA = 70C 0.7 Thermal resistance, junction to ambient R JA 120 C/W Junction and storage temperature range TJ, TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-JTR18 Page 1 Comchip Technology CO., LTD.MOSFET Electrical Characteristics (at Ta=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Static Parameters Drain-source breakdown voltage VGS = 0V, ID = -250A BVDSS -30 V Zero gate voltage drain current VDS = -30V, VGS = 0V A IDSS -1 Gate-body leakage nA IGSS VDS = 0V , VGS = 20V 100 Gate threshold voltage VGS(th) VDS = VGS, ID = -250A -1 -3 V VDS = -5V, VGS = -10V On-state drain current ID(on) -10 A VGS = -10V, ID = -1.9A 158 190 Static drain-source on resistance RDS(on) m VGS = -4.5V, ID = -1.4A 275 330 Drain-source diode forward voltage IS = -1.5A, VGS = 0V VSD -0.8 -1.2 V gFS Forward transconductance VDS = -5V, ID = -1.9A 2 S Max. body-diode continuous current IS -1.75 A Dynamic Characteristics Input capacitance Ciss 155 Output capacitance pF Coss VGS = 0V, VDS = -15V, f = 1MHZ 35 Reverse transfer capacitance Crss 25 VGS = 0V, VDS = 0V, f = 1MHZ Gate resistance RG 4 8 Switching Characteristics Turn-on delay time td(on) 4 8 tr 11 18 Rise time VDD = -15V, RL = 10, IDS = -1.5A, nS VGEN = -10V, RG = 1 Turn-o delay time td(o) 11 18 Fall time tf 8 18 VGS = -15V, VDS = -10V, ID = -1.9A 15.5 22 Total gate charge Qg 2 4 nC Gate-source charge Qgs VGS = -15V, VDS = -4.5V, ID = -1.9A 0.6 Gate-drain charge Qgd 1 Body diode reverse recovery time trr 17 26 nS IF = -1.5A, dl/dt = 100A/s Body diode reverse recovery charge Qrr 7 nC Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-JTR18 Page 2 Comchip Technology CO., LTD.