MOSFET Comchip S M D D i o d e S p e c i a l i s t CJ3139KDW-G (Dual P-Channel ) RoHS Device SOT-363 0.087(2.20) V(BR)DSS RDS(on)MAX ID 0.079(2.00) 6 5 4 520m -4.5V 0.053(1.35) 0.045(1.15) 700m -2.5V -20V -0.66A 1 2 3 0.055(1.40) 950m (TYP) -1.8V 0.047(1.20) 0.006(0.15) 0.003(0.08) 0.045(1.15) 0.041(1.05) 0.096(2.45) 0.085(2.15) Features 0.018(0.46) - High-side switching 0.014(0.35) 0.004(0.10) 0.006(0.15) 0.000(0.00) 0.010(0.26) - Low on-resistance - Low threshold Dimensions in inches and (millimeter) - Fast switching speed Circuit diagram Mechanical data G : Gate D1 S2 G2 S : Source - Case: SOT-363, molded plastic. 6 5 4 D : Drain - Terminals: Solderable per MIL-STD-750, method 2026. - Weight: 0.006 grams (approx.) 2 3 1 G1 D2 S1 Maximum Ratings (at Ta=25 C unless otherwise noted) Symbol Parameter Value Unit Drain-source voltage VDSS -20 V Typ. Gate-source voltage VGS 12 V Drain current-Continuous ID(DC) -0.66 A Drain current-pulsed (note1) IDM(pulse) -2.64 A Power dissipation (note 2) PD 150 mW Thermal resistance from junction to ambient R JA 833 C/W Junction temperature range TJ -40 to +150 C Storage temperature range TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR52 Page 1 Comchip Technology CO., LTD.MOSFET Comchip S M D D i o d e S p e c i a l i s t Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit On/Off States Drain-source breakdown voltage VGS = 0V , ID = -250A V(BR) DSS -20 V Gate threshold voltage (note 3) VGS(th) VDS = VGS , ID = -250A -0.35 -1.1 V Gate-body leakage current VGS = 10V, VDS = 0V IGSS 20 A Zero gate voltage drain current A IDSS VDS = -20V , VGS = 0V -1 VGS = -4.5V , ID = -1A 520 Drain-source on-state resistance (note 3) RDS(on) VGS = -2.5V , ID = -800mA 700 m VGS = -1.8V , ID = -500mA 950 gfs VDS = -10V , ID = -540mA Forward transconductance 0.8 S Dynamic characteristics (note 4) Input capacitance ciss 170 VDS = -16V , VGS = 0V Output capacitance pF Coss 25 f=1MHZ Reverse transfer capacitance Crss 15 Switching time (note4) Turn-on delay time td(on) 9 Rise time tr 5.8 VDD = -10V, ID = -200mA nS VGS = -4.5V, RG = 10 Turn-off delay time td(off) 32.7 20.3 Fall time tf Drain-source diode characteristics Drain-source diode forward voltage IS = -0.5A , VGS = 0V VSD -1.2 V (note 3) Notes: 1. Repetitive rating: Pulse width limited by maximum junction temperture. 2. This test is performed with no heat sink at Ta=25C. 3. Pulse test: Pulse width 300s, Duty cycle 0.5%. 4. These parameters have no way to verify. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BTR52 Page 2 Comchip Technology CO., LTD.