MOSFET CMS07P10V8-HF P-Channel RoHS Device Halogen Free Features PR-PACK(3x3) 0.128(3.25) - VDS= -100V, ID= -7A, 0.118(3.00) 0.033(0.85) RDS(ON)=260m VGS=-10V. 0.028(0.70) - Super high density cell design for 0.136(3.45) 0.126(3.20) extremely low RDS(ON). 0.124(3.15) 0.114(2.90) - High power and current handling capability. 0.010(0.25) 0.026(0.65) 0.008(0.20) 0.004(0.10) BSC 0.002(0.06) Mechanical data 0.104(2.65) 0.090(2.29) D D D D 0.022(0.57) 0.026(0.65) - Case: PR-PACK(3x3), molded plastic. 0.011(0.27) 0.011(0.28) 0.136(3.45) 0.124(3.15) 0.076(1.94) 0.061(1.54) 0.030(0.77) 0.015(0.37) Circuit Diagram 0.035(0.89) 0.020(0.50) 0.020(0.50) D 0.012(0.30) - G : Gate G S S S 0.016(0.40) - S : Source 0.008(0.20) - D : Drain G Dimensions in inches and (millimeter) S Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Conditions Value Unit Drain-source voltage VDS -100 V Gate-source voltage VGS 20 V C=25C -7.0 C=100C -4.4 Drain Current-Continuous ID A A=25C -2.2 A=100C -1.4 C=25C -28 Drain current-pulsed (Note 1) IDM A A=25C -8.8 C=25C 25 Maximum power dissipation PD W A=25C 2.5 Operating and storage temperature range TJ, TSTG -55 to +150 C R JC Thermal resistance, junction to case (Note 2) 5 C/W Thermal resistance, junction to ambient (Note 2) 50 R JA C/W Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. Surface mounted on FR4 board, t 10 sec. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR96 Page 1 Comchip Technology CO., LTD.MOSFET Electrical Characteristics (at TC=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Off Characteristics Drain-source breakdown voltage VGS = 0V, ID = -250A BVDSS -100 V Zero gate voltage drain current VDS = -100V, VGS = 0V A IDSS -1 Gate body leakage current, forward IGSSF VGS = 20V, VDS = 0V 100 nA Gate body leakage current, reverse IGSSR VGS = -20V, VDS = 0V -100 nA On Characteristics (Note 1) Gate threshold voltage VGS(th) VGS = VDS, ID = -250A -2 -4 V RDS(on) VGS = -10V, ID = -4A Static drain-source on-resistance 210 260 m Dynamic Characteristics (Note 2) Input capacitance Ciss 680 VDS = -15V, VGS = 0V, f = 1MHz pF Output capacitance 100 Coss Reverse transfer capacitance Crss 60 Switching Characteristics (Note 2) Turn-on delay time td(on) 13 Turn-on rise time tr 7 VDD = -80V, ID = -7A, nS VGS = -10V, RGEN = 6 Turn-off delay time td(off) 29 Turn-off fall time tf 5 Total gate charge Qg 16 Gate-source charge Qgs VDS = -80V, ID = -7A, VGS = -10V 2 nC Gate-drain charge Qgd 6 Drain-Source-Diode Characteristics and Maximum Ratings -7 A Drain-source diode forward current IS Drain-source diode forward voltage (Note 1) VGS = 0V, IS = -1A VSD -1.2 V Notes: 1. Pulse test: pulse width 300s, duty cycle 2%. 2. Guaranteed by design, not subject to production testing. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR96 Page 2 Comchip Technology CO., LTD.