MOSFET CMS100N03H8-HF N-Channel RoHS Device Halogen Free PR-PAK Features - Low on-resistance. 0.197(5.00) 0.161(4.10) 0.012(0.30) 0.189(4.80) 0.146(3.70) - Low miller charge. 0.008(0.20) D D D D 8 7 6 5 - Low input capacitance. - 100% EAS and Rg guaranteed. 0.138(3.50) REF. 0.244(6.20) 0.232(5.90) 0.232(5.90) 0.224(5.70) - Green device available. 0.043(1.10) REF. Mechanical data 1 2 3 4 S S S G 0.008(0.20) 0.024(0.60) 0.020(0.51) 0.050(1.27) 0.002(0.06) 0.012(0.30) Nom. - Case: PR-PAK Nom. 0.004(0.10) Circuit Diagram 0.000(0.00) 0.045(1.15) D - G : Gate 0.033(0.85) - S : Source - D : Drain G Dimensions in inches and (millimeter) S Maximum Ratings Symbol Parameter Conditions Value Unit Drain-source voltage VDS 30 V Gate-source voltage VGS 20 V TC = 25C ID 100 (Note 3) Continuous drain current (Note 1) A TC = 70C ID 80 Pulsed drain current (Note 1) IDM 500 A ID TA = 25C 38 Continuous drain current A TA = 70C ID 30 TC = 25C PD 83 Total power dissipation W TA = 25C PD 3.6 Single pulse avalanche energy, L=0.1mH EAS 151 mJ Single pulse avalanche current, L=0.1mH IAS 55 A Operating junction and storage temperature range TJ, TSTG -55 to +150 C Thermal resistance junction-ambient (Note 2) Steady state R JA 35 C/W Thermal resistance junction-case (Note 2) Steady state R JC 1.5 C/W Notes: 1. The data tested by pulsed, pulse width 300s, duty cycle 2%. 2. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by desgn while R CA is determined by the users board design. RJA shown below for single device operation on FR-4 in still air. 3. Package limitation current is 100A. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR103 Page 1 Comchip Technology CO., LTD.MOSFET Electrical Characteristics (at TJ=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Drain-source breakdown voltage VGS = 0V, ID = 250A BVDSS 30 V Gate threshold voltage VGS(th) VDS = VGS, ID = 250A 1.2 2.5 Gate-source leakage current IGSS VGS = 20V 100 nA Drain-source leakage current VDS = 24V, VGS = 0V A IDSS 1 VGS = 10V, ID = 30A 1.5 1.8 Static drain-source on-resistance (Note 1) RDS(on) m VGS = 4.5V, ID = 15A 2.1 2.4 Total gate charge (Note 1) Qg 82 Gate-source charge Qgs ID = 30A, VDS = 15V, VGS = 10V 24 nC Gate-drain (miller) charge Qgd 5 Turn-on delay time (Note 1) td(on) 22 Rise time tr 7 VDS = 15V, ID = 30A, nS VGS = 10V, RG = 3 Turn-off delay time td(off) 100 Fall time tf 18 Input capacitance Ciss 4222 VGS = 0V, VDS = 15V, f = 1MHZ pF Output capacitance Coss 889 Reverse transfer capacitance Crss 389 Rg Gate resistance f = 1MHZ 3.0 Source-drain diode Diode forward voltage (Note 1) VSD IS = 30A, VGS = 0V 1.3 V Reverse recovery time 32 trr nS IF = 30A , dl/dt = 100A/s TJ=25C Reverse recovery charge Qrr 120 nC Guaranteed avalanche characteristics Single pulse avalanche energy (Note 2) VDD = 20V, L= 0.1mH, IAS = 45A EAS 101 mJ Notes: 1. The data tested by pulsed, pulse width 300s, duty cycle 2%. 2. The min. value is 100% EAS tested guarantee. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR103 Page 2 Comchip Technology CO., LTD.