MOSFET CMS100N04H8-HF N-Channel RoHS Device Halogen Free PR-PAK Features - Advanced DMOS trench technology. 0.197(5.00) 0.161(4.10) 0.012(0.30) 0.189(4.80) 0.146(3.70) - Fast switching. 0.008(0.20) D D D D - Improve dv/dt capability. 8 7 6 5 - 100% EAS and Rg guaranteed. 0.138(3.50) REF. 0.244(6.20) 0.232(5.90) - Green device available. 0.232(5.90) 0.224(5.70) 0.043(1.10) REF. 1 2 3 4 Mechanical data S S S G 0.008(0.20) 0.024(0.60) 0.020(0.51) 0.050(1.27) 0.002(0.06) 0.012(0.30) Nom. Nom. - Case: PR-PAK 0.004(0.10) 0.000(0.00) Circuit Diagram 0.045(1.15) 0.033(0.85) D - G : Gate - S : Source - D : Drain Dimensions in inches and (millimeter) G S Maximum Ratings Symbol Parameter Conditions Value Unit Drain-source voltage VDS 40 V Gate-source voltage VGS 20 V TC = 25C ID 100 Continuous drain current (Note 1) A TC = 100C ID 63 Pulsed drain current (Note 1, 2) IDM 400 A TC = 25C PD 135 Total power dissipation (Note 4) W TA = 25C PD 2 Single pulse avalanche energy, L=0.1mH (Note 3) EAS 312 mJ Single pulse avalanche current, L=0.1mH (Note 3) IAS 79 A Operating junction and storage temperature range TJ, TSTG -55 to +150 C Thermal resistance junction-ambient (Note 1) Steady state R JA 62.5 C/W Thermal resistance junction-case (Note 1) Steady state R JC 0.92 C/W Notes: 1. The data tested by surface mounted on a 1inch FR-4 board with 2oz copper. 2. The data tested by pulsed, pulse width 300s, duty cycle 2%. 3. The EAS data shows max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=79A. 4. The power dissipation is limited by 150C junction temperature. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR104 Page 1 Comchip Technology CO., LTD.MOSFET Electrical Characteristics (at TJ=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Drain-source breakdown voltage VGS = 0V, ID = 250A BVDSS 40 V Gate threshold voltage VGS(th) VDS = VGS, ID = 250A 1.2 1.6 2.5 V Gate-source leakage current IGSS VGS = 20V 100 nA Drain-source leakage current (Tj=25C) VDS = 40V, VGS = 0V 1 A IDSS Drain-source leakage current (Tj=125C) VDS = 32V, VGS = 0V 10 VGS = 10V, ID = 25A 2.2 2.8 Static drain-source on-resistance (Note 2) RDS(on) m VGS = 4.5V, ID = 12A 2.6 3.5 Total gate charge (Note 2) Qg 44.4 Gate-source charge Qgs ID = 10A, VDS = 20V, VGS = 4.5V 9.6 nC Gate-drain (miller) charge Qgd 16 Turn-on delay time (Note 2) td(on) 28 Rise time tr 3.2 VDD = 20V, ID = 1A nS VGS = 10V, RG = 6 Turn-off delay time td(off) 89 Fall time tf 14 Input capacitance Ciss 4940 VGS = 0V, VDS = 25V, f = 1MHZ pF Output capacitance Coss 425 Reverse transfer capacitance Crss 170 Gate resistance Rg 1.4 f = 1MHZ Source-drain diode Diode forward voltage (Note 2) VSD IS = 20A, VGS = 0V, TJ = 25C 1.2 V Continuous source current (Note 1, 4) IS 100 A VG = VD = 0V, Force current Pulsed source current (Note 2, 4) ISM 200 A Guaranteed avalanche characteristics Single pulse avalanche energy (Note 3) EAS VDD = 25V, L = 0.1mH, IAS = 40A 80 mJ Notes: 1. The data tested by surface mounted on a 1inch FR-4 board with 2oz copper. 2. The data tested by pulsed, pulse width 300s, duty cycle 2%. 3. The min. value is 100% EAS tested guarantee. 4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR104 Page 2 Comchip Technology CO., LTD.