MOSFET Comchip S M D D i o d e S p e c i a l i s t CMS10P10D-HF P-Channel RoHS Device Halogen Free D-PAK(TO-252) Features 0.023(0.58) 0.265(6.73) - Low reverse transfer capacitance. 0.252(6.40) 0.018(0.45) - Improved dv/dt capability. 0.094(2.38) 0.215(5.46) 0.173(4.40) 0.087(2.20) 0.205(5.21) Min - 100% EAS guaranteed. 0.050(1.27) 0.035(0.89) - High switching speed. 0.205(5.21) - Low gate charge. Min 0.245(6.22) 0.236(6.00) 0.409(10.40) - Green device available. 0.370(9.40) G S 0.108(2.74) D REF. Mechanical data 0.020(0.508) 0.040(1.01) 0.045(1.14) 0.035(0.88) BSC 0.025(0.64) 0.030(0.77) 0.025(0.64) - Case: D-PAK/TO-252 standard package, 0.070(1.77) 0.090(2.286) 0.055(1.40) BSC molded plastic. Dimensions in inches and (millimeters) Circuit Diagram D - G : Gate - S : Source - D : Drain G S Maximum Ratings Symbol Parameter Conditions Value Unit Drain-source voltage VDS -100 V Gate-source voltage VGS 20 V TC = 25C ID -10 Continuous drain current (Note 1) A TC = 100C ID -6 Pulsed drain current (Note 1, 2) TC = 25C IDM -40 A TC = 25C PD 54 Total power dissipation (Note 4) W TA = 25C PD 2 Single pulse avalanche energy, L=0.1mH (Note 3) EAS 26.4 mJ Single pulse avalanche current, L=0.1mH (Note 3) IAS -23 A Operating junction and storage temperature range TJ, TSTG -55 to +150 C R JA Thermal resistance junction-ambient (Note 1) Steady state 62.5 C/W Steady state Thermal resistance junction-case (Note 1) R JC 2.3 C/W Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR100 Page 1 Comchip Technology CO., LTD. 0.005(0.127) 0.000(0.00)MOSFET Comchip S M D D i o d e S p e c i a l i s t Electrical Characteristics (at Tj=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Drain-source breakdown voltage VGS = 0, ID = -250A BVDSS -100 V Gate threshold voltage VGS(th) VDS = VGS, ID = -250A -1.0 -1.9 -3.0 Gate-source leakage current IGSS VGS = 20V 100 nA Drain-source leakage current IDSS VDS = -100V, VGS = 0 -1 A VGS = -10V, ID = -5A 170 210 Static drain-source on-resistance (Note 2) RDS(on) m VGS = -4.5V, ID = -3A 190 230 Total gate charge (Note 2) Qg 20 Gate-source charge Qgs ID = -5A, VDS = -80V, VGS = -10V 3.5 nC Gate-drain (miller) charge Qgd 4.6 Turn-on delay time (Note 2) td(on) 18 Rise time tr 8 VDD = -50V, VGS = -10V nS ID = -5A, RG = 25 Turn-off delay time td(off) 100 Fall time tf 30 Input capacitance 1419 Ciss Output capacitance VGS = 0V, VDS = -25V, f = 1MHZ pF Coss 89 Reverse transfer capacitance Crss 45 Source-drain diode Forward on voltage (Note 2) VSD IS = -1A, VGS = 0V -0.74 -1.2 V -10 A Continuous source current (Note 1, 6) IS Guaranteed avalanche characteristics Single pulse avalanche energy (Note 5) VDD = -25V, L = 0.1mH, IAS = -12A EAS 7.2 mJ Notes: 1. The data tested by surface mounted on a 1 inch FR-4 board with 2 oz copper. 2. The data tested by pulsed, pulse width 300s, duty cycle 2%. 3. The EAS data shows max. rating. The test condition is VDD=-25V, VGS=-10V, L=0.1mH, IAS=-23A. 4. The power dissipation is limited by 150C junction temperature. 5. The min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR100 Page 2 Comchip Technology CO., LTD.