MOSFET CMS46N03V8-HF N-Channel RoHS Device Halogen Free PDFN3.3x3.3(SPR-PAK) Features - Advanced high cell density trench 0.126(3.20) 0.102(2.59) 0.118(3.00) 0.094(2.39) technology. D D D D 0.020(0.50) - Super low gate charge. 8 7 6 5 0.012(0.30) - Excellent cdv/dt effect decline. 0.136(3.45) 0.066(1.68) 0.128(3.25) 0.058(1.48) - Green device available. 0.126(3.20) 0.006(0.15) 0.118(3.00) - 100% EAS guaranteed. Max. 1 2 3 4 0.020(0.50) 0.012(0.30) Mechanical data S S S G 0.014(0.35) 0.026(0.65) 0.010(0.25) BSC - Case: PDFN3.3x3.3/SPR-PAK standard package, molded plastic. 0.031(0.80) 0.028(0.70) 0.010(0.25) Circuit Diagram 0.134(3.40) 0.004(0.10) 0.126(3.20) D - G : Gate - S : Source - D : Drain G Dimensions in inches and (millimeter) S Maximum Ratings Symbol Parameter Conditions Value Unit Drain-source voltage VDS 30 V Gate-source voltage VGS 20 V Continuous drain current (Note 1, 4) TC = 25C ID 46 A Continuous drain current (Note 1) TC = 100C ID 29 Pulsed drain current (Note 1, 2) IDM 92 A TA = 25C ID 11 Continuous drain current A TA = 70C ID 9 TC = 25C PD 29 Total power dissipation (Note 4) W TA = 25C PD 1.67 Single pulse avalanche energy, L=0.1mH (Note 3) EAS 57.8 mJ Single pulse avalanche current, L=0.1mH (Note 3) 34 A IAS Operating junction and storage temperature range TJ, TSTG -55 to +150 C Thermal resistance junction-ambient (Note 1) Steady state R JA 75 C/W Thermal resistance junction-case (Note 1) Steady state R JC 4.3 C/W Notes: 1. The data tested by surface mounted on a 1 inch FR-4 board with 2 oz copper. 2. The data tested by pulsed, pulse width 300s, duty cycle 2%. 3. The EAS data shows max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=34A. 4. The power dissipation is limited by 150C junction temperature. Package limitation current is 40A. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR106 Page 1 Comchip Technology CO., LTD.MOSFET Electrical Characteristics (at TJ=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Drain-source breakdown voltage VGS = 0V, ID = 250A BVDSS 30 V Gate threshold voltage VGS(th) VDS = VGS, ID = 250A 1.0 2.5 Gate-source leakage current IGSS VGS = 20V 100 nA Drain-source leakage current (Tj=25C) VDS = 24V, VGS = 0V 1 A IDSS Drain-source leakage current (Tj=55C) VDS = 24V, VGS = 0V 5 VGS = 10V, ID = 15A 9 Static drain-source on-resistance (Note 2) RDS(on) m VGS = 4.5V, ID = 10A 15 Total gate charge (Note 2) Qg 12.8 Gate-source charge Qgs ID = 12A, VDS = 20V, VGS = 4.5V 3.3 nC Gate-drain (miller) charge Qgd 6.5 Turn-on delay time (Note 2) td(on) 4.5 Rise time tr 10.8 VDS = 12V, ID = 5A nS VGS = 10V, RG = 3.3 Turn-off delay time td(off) 25.5 Fall time tf 9.6 Input capacitance Ciss 1317 VGS = 0V, VDS = 15V, f = 1MHZ pF Output capacitance Coss 163 Reverse transfer capacitance Crss 131 Rg Gate resistance f = 1MHZ 1.7 Source-drain diode Diode forward voltage (Note 2) VSD IS = 15A, VGS = 0V, TJ=25C 1.2 V 40 A Continuous source current (Note 1, 4) IS VG = VD = 0V, Force current A Pulsed source current (Note 2, 4) ISM 80 Guaranteed avalanche characteristics Single pulse avalanche energy (Note 3) EAS VDD = 25V, L = 0.1mH, IAS = 20A 20 mJ Notes: 1. The data tested by surface mounted on a 1 inch FR-4 board with 2 oz copper. 2. The data tested by pulsed, pulse width 300s, duty cycle 2%. 3. The min. value is 100% EAS tested guarantee. 4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR106 Page 2 Comchip Technology CO., LTD.