MOSFET CMS80N03H8-HF N-Channel RoHS Device Halogen Free PR-PAK Features - Advanced high cell density 0.197(5.00) 0.161(4.10) 0.012(0.30) trench technology 0.189(4.80) 0.146(3.70) 0.008(0.20) D D D D - Super low gate charge. 8 7 6 5 - Excellent Cdv/dt effect decline. 0.138(3.50) REF. 0.244(6.20) 0.232(5.90) - 100% EAS and Rg guaranteed. 0.232(5.90) 0.224(5.70) - Green device available. 0.043(1.10) REF. 1 2 3 4 S S S G 0.008(0.20) 0.024(0.60) 0.020(0.51) 0.050(1.27) 0.002(0.06) Mechanical data 0.012(0.30) Nom. Nom. - Case: PR-PAK 0.004(0.10) 0.000(0.00) 0.045(1.15) 0.033(0.85) Circuit Diagram D - G : Gate - S : Source Dimensions in inches and (millimeter) - D : Drain G S Maximum Ratings Parameter Symbol Value Unit Conditions Drain-source voltage VDS 30 V Gate-source voltage VGS 20 V TC = 25C ID 80 Continuous drain current (Note 1) A TC = 100C ID 50 Pulsed drain current (Note 1, 2) IDM 160 A TC = 25C PD 53 Total power dissipation (Note 4) W TA = 25C PD 2 Single pulse avalanche energy, L=0.1mH (Note 3) EAS 88 mJ Single pulse avalanche current, L=0.1mH (Note 3) 42 A IAS Operating junction and storage temperature range TJ, TSTG -55 to +150 C Thermal resistance junction-ambient (Note 1) Steady state R JA 62.5 C/W Thermal resistance junction-case (Note 1) Steady state R JC 2.36 C/W Notes: 1. The data tested by surface mounted on a 1inch FR-4 board with 2oz copper. 2. The data tested by pulsed, pulse width 300s, duty cycle 2%. 3. The EAS data shows max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=42A. 4. The power dissipation is limited by 150C junction temperature. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR102 Page 1 Comchip Technology CO., LTD.MOSFET Electrical Characteristics (at TJ=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Drain-source breakdown voltage VGS = 0V, ID = 250A BVDSS 30 V Gate threshold voltage VGS(th) VDS = VGS, ID = 250A 1.0 2.5 V gfs VDS = 10V, ID = 10A Forward transconductance 18 S Gate-source leakage current IGSS VGS = 20V 100 nA Drain-source leakage current (Tj=25C) VDS = 30V, VGS = 0V 1 A IDSS Drain-source leakage current (Tj=125C) VDS = 24V, VGS = 0V 10 VGS = 10V, ID = 20A 5.5 Static drain-source on-resistance (Note 2) RDS(on) m VGS = 4.5V, ID = 10A 8 Total gate charge (Note 2) Qg 11.1 Gate-source charge Qgs ID = 20A, VDS = 15V, VGS = 4.5V 1.9 nC Gate-drain (miller) charge Qgd 6.8 Turn-on delay time (Note 2) td(on) 7.5 Rise time tr 14.5 VDD = 15V, ID = 15A nS VGS = 10V, RG = 3.3 Turn-off delay time td(off) 35.2 Fall time tf 9.6 Input capacitance Ciss 1160 pF Output capacitance Coss VGS = 0V, VDS = 25V, f = 1MHZ 200 Reverse transfer capacitance Crss 180 Rg Gate resistance f = 1MHZ 2.5 3.5 Source-drain diode Diode forward voltage (Note 2) VSD IS = 20A, VGS = 0V, TJ=25C 1.2 V Continuous source current (Note 1, 4) IS 80 A VG = VD = 0V, Force current Pulsed source current (Note 2, 4) ISM 160 A Guaranteed avalanche characteristics Single pulse avalanche energy (Note 3) EAS VDD = 25V, L = 0.1mH, IAS = 20A 20 mJ Notes: 1. The data tested by surface mounted on a 1inch FR-4 board with 2oz copper. 2. The data tested by pulsed, pulse width 300s, duty cycle 2%. 3. The min. value is 100% EAS tested guarantee. 4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR102 Page 2 Comchip Technology CO., LTD.