CPDF3V3UP-HF Comchip

SMD ESD Protection Diode CPDF3V3UP-HF RoHS Device Halogen Free Features 1005/SOD-323F - Working voltage: 3.3V 0.102(2.60) 0.095(2.40) - Low leakage current. - Low operating and clamping voltages. 0.051(1.30) 0.043(1.10) Mechanical data - Case: 1005/SOD-323F standard package, molded plastic. 0.035(0.90) - Terminals: Gold plated, solderable per 0.027(0.70) MIL-STD-750,method 2026. 0.024(0.60) - Marking code: E3V3 0.016(0.40) - Mounting position: Any 0.014(0.35) 0.011(0.28) - Weight: 0.003 grams(approx.). 0.041(1.05) 0.037(0.95) Circuit Diagram Dimensions in inches and (millimeter) Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Peak pulse power ( tp = 8/20 us) PPP 40 W Peak pulse current ( tp = 8/20 us) IPP 5 A ESD per IEC 61000-4-2(Air) 20 VESD kV ESD per IEC 61000-4-2(Contact) 15 Operating temperature range Tj -55 to +125 C Storage temperature range TSTG -55 to +125 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Reverse stand-off voltage VRWM 3.3 V Punch-through voltage IPT = 2uA VPT 3.5 V Snap-back voltage ISB = 50mA VSB 2.8 V Reverse leakage current VRWM = 3.3V IR 0.05 0.5 uA IPP = 1 A, tp=8/20us VC 5.5 V Clamping voltage IPP = 5 A, tp=8/20us VC 8.0 V Reverse clamping voltage IPPR = 1 A, tp=8/20us VCR 2.4 V Junction capacitance VR = 0 V, f = 1MHz Cj pF 12 16 Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-G7043 Page 1 Comchip Technology CO., LTD.SMD ESD Protection Diode Comchip SMD Diode Specialist RATING AND CHARACTERISTIC CURVES (CPDF3V3UP-HF) Fig.1 - Non-Repetitive Max. Peak Pulse Fig.2 - Power Rating Derating Curve Power Vs. Pulse Time 110 1 100 90 80 70 60 0.1 50 40 30 20 10 0.01 0 0.1 1 10 100 1000 0 25 50 75 100 125 150 Pulse Duration-Tp(us) Ambient Temperature, ( C ) Fig.3 - Clamping Voltage Vs. Fig.4 - Clamping Voltage Vs. Forward Peak Pulse Current Peak Pulse Current 16 12 Waveform 14 Parameters: 10 tr=8us td=20us 12 8 10 8 6 Waveform 6 Parameters: 4 tr=8us td=20us 4 2 2 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Peak Pulse Current,(A) Forward Peak Pulse Current,(A) Fig.5 - Junction Capacitance Vs. Reverse Voltage 20 16 12 8 4 0 0 1 2 3 4 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-G7043 Page 2 Comchip Technology CO., LTD. Normalized Capacitance - Cj (pF) Clamping Voltage, (V) Max. Peak Pulse Power-PPP(kW ) Voltage, (V) Power Rating, (%)