SMD ESD Protection Diode CPDQ3V3U-HF RoHS Device Halogen Free Features 0402/SOD-923F - IEC61000-4-2 Level 4 ESD protection. - ESD Rating of Class 3(>16kV) per Human Body Mode. 0.041(1.05) 0.037(0.95) - Low body height: 0.017(0.43mm) 0.033(0.85) 0.030(0.75) - Low Leakage Mechanical data 0.010(0.25) 0.006(0.15) 0.026(0.65) 0.022(0.55) - Epoxy: Meets UL 94V-0 - Case: 0402/SOD-923F small outline plastic package. 0.007(0.17) 0.003(0.07) 0.006(0.15) molded plastic. 0.002(0.05) - Terminals: Matte tin plated, solderable per 0.016(0.40) MIL-STD-750, method 2026. 0.013(0.34) - Mounting position: Any. Dimensions in inches and (millimeter) - High temperature soldering guaranteed: 260C/10 second. - Weight: 0.001 grams(approx.). Circuit Diagram - Pin 1: Cathode 1 2 - Pin 2: Anode Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter Conditions Value Unit Typ. peak pulse power TP = 8/20 us PPP 102 W Peak pulse current TP = 8/20 us IPP 9.8 A IEC 61000-4-2(Air) ESD 15 kV ESD capability IEC 61000-4-2(Contact) ESD 8 kV Junction temperature rang TJ -55 to +150 C Storage temperature rang TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV: B QW-JP031 Page 1 Comchip Technology CO., LTD.SMD ESD Protection Diode Electrical Characteristics (at TA=25C unless otherwise noted. VF=0.9V Max. IF=10mA for all types) Symbol Typ Parameter Conditions Min Max Unit Working peak reverse voltage VRWM 3.3 V Forward voltage IF = 10mA VF 0.9 V Breakdown voltage IT = 1mA VBR 5.0 V Reverse leakage current A VRWM = 3.3V IR 2.5 Clamping voltage IPP = 9.8A, TP = 8/20us VC 10.4 V Junction capacitance VR = 0V, f = 1MHz pF CJ 80 NOTES: 1. FR-5= 1.0*0.75*0.62 in. 2. Surge current waveform per Figure 3 3. VBR is measured with a pulse test current IT at an ambient temperature of 25C. RATING AND CHARACTERISTIC CURVES (CPDQ3V3U-HF) Fig.1 - Typical Breakdown Votage Fig.2 - Typical Leakage Current Versus Temperature Versus Temperature 7.4 20 7.3 18 7.2 16 7.1 14 7.0 12 6.9 10 6.8 8 6.7 6 6.6 4 6.5 2 6.5 6.3 0 -55 +25 +150 -55 +25 +150 Temperature, ( C ) Temperature, ( C ) Fig.3 - 8/20us Peak Pulse Current Wa veform Acc. IEC 61000-4-5 120% Test Waveform parameters tf=8us Ta=25C Peak Valur Ipp td=20us 100% -t 80% e 60% 40% td= t Ipp / 2 20% 0% 0 5 10 15 20 25 30 Time, (us) Company reserves the right to improve product design , functions and reliability without notice. REV: B QW-JP031 Page 2 Comchip Technology CO., LTD. Breakdown Voltage , (V) (Vz IZ) Percentage of Ipp IR , (nA)