General Purpose Transistor MMBT2907A-G (PNP) RoHS Device Features SOT-23 -Epitaxial planar die construction -Device is designed as a general purpose 0.118(3.00) 0.110(2.80) amplifier and switching. 3 -Useful dynamic range exceeds to 600mA 0.055(1.40) 0.047(1.20) As a switch and to 100MHz as an amplifier. 1 2 0.079(2.00) 0.071(1.80) 0.006(0.15) 0.003(0.08) 0.041(1.05) 0.100(2.55) Collector 0.035(0.90) 3 0.089(2.25) 0.004(0.10) max 1 Base 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) 2 Emitter Dimensions in inches and (millimeter) Maximum Ratings (at Ta=25C unless otherwise noted) Parameter Symbol Value Units Collector-Base voltage VCBO -60 V Collector-Emitter voltage VCEO -60 V Emitter-Base voltage VEBO -5 V Collector current-continuous IC -600 mA Total device dissipation PD 250 mW Thermal resistance, junction to ambient R JA 500 C/W Junction temperature TJ 150 C Storage temperature range TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR03 Page 1General Purpose Transistor Electrical Characteristics ( TA=25C unless otherwise noted) Parameter Symbol Conditions Min. Max. Units Collector-Base breakdown voltage V(BR)CBO IC=-10 A, IE=0 -60 V Collector-Emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -60 V (Note 1) Emitter-Base breakdown voltage V(BR)EBO IE=-10 A, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -20 nA VEB=-3V, IC=0 Base cut-off current IEBO -10 nA VCE=-30V, VBE(off)=-0.5V Collector cut-off current ICEX -50 nA hFE(1) VCE=-10V, IC=-150mA 100 300 hFE(2) VCE=-10V, IC=-0.1mA 75 DC current gain hFE(3) VCE=-10V, IC=-1mA 100 hFE(4) VCE=-10V, IC=-10mA 100 hFE(5) VCE=-10V, IC=-500mA 50 Collector-Emitter saturation voltage IC=-150mA, IB=-15mA -0.4 VCE(sat) V IC=-500mA, IB=-50mA (Note 1) -1.6 Base-Emitter saturation voltage IC=-150mA, IB=-15mA -1.3 VBE(sat) V IC=-500mA, IB=-50mA (Note 1) -2.6 VCE=-20V, IC=-50mA Transition frequency fT 200 MHz f=100MHz Delay time td 10 nS VCE=-30V IC=-150mA, IB1=-15mA Rise time tr 25 nS Storage time tS 225 nS VCE=-6V, IC=-150mA IB1=-IB2=-15mA Fall time tf 60 nS Notes: 1. Pulse test: Pulse Width 300s, Duty Cycle 2.0%. Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR03 Page 2