X-On Electronics has gained recognition as a prominent supplier of MTB030N10RQ8 MOSFETs across the USA, India, Europe, Australia, and various other global locations. MTB030N10RQ8 MOSFETs are a product manufactured by CYSTECH. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MTB030N10RQ8 CYSTECH

MTB030N10RQ8 electronic component of CYSTECH
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Part No.MTB030N10RQ8
Manufacturer: CYSTECH
Category: MOSFETs
Description: MOSFET N Trench 100V 6.2A 2.5V @ 250uA 30 mΩ @ 10A,10V SOP-8 RoHS
Datasheet: MTB030N10RQ8 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
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We are delighted to provide the MTB030N10RQ8 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MTB030N10RQ8 and other electronic components in the MOSFETs category and beyond.

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The MTB030N10RQ8 is a MOSFET N Trench 100V 6.2A 2.5V @ 250uA 30 mΩ @ 10A,10V SOP-8 RoHS manufactured by CYSTECH. This component is an 8 pin surface mounted device (SMD) which can be used in various applications. It has a drain-source voltage (Vds) of 100V and a drain source current (Ids) of 6.2A. It also features a gate-source voltage (Vgs) of 2.5V and a gate threshold voltage (Vth) of 250uA. The device has a sub-threshold saturation (Ssat) of 30 mΩ @ 10A,10V. This RoHS compliant component has been designed to meet the requirements of high power switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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