X-On Electronics has gained recognition as a prominent supplier of MTC1016S6R MOSFETs across the USA, India, Europe, Australia, and various other global locations. MTC1016S6R MOSFETs are a product manufactured by CYSTECH. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MTC1016S6R CYSTECH

MTC1016S6R electronic component of CYSTECH
MTC1016S6R CYSTECH
MTC1016S6R MOSFETs
MTC1016S6R  Semiconductors

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See Product Specifications
Part No. MTC1016S6R
Manufacturer: CYSTECH
Category: MOSFETs
Description: MOSFET N & P Trench 20V 820mA,570mA 1.2V @ 250uA 400 mΩ @ 600mA,4.5V,750 mΩ @ 430mA,4.5V SOT-363R RoHS
Datasheet: MTC1016S6R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Rohs
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Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MTC1016S6R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MTC1016S6R and other electronic components in the MOSFETs category and beyond.

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The MTC1016S6R is a dual N-Channel MOSFET with integrated Trench technology manufactured by CYSTECH. It is a low on-resistance MOSFET that operates on a maximum drain-source voltage of 20V and can handle a continuous current up to 820mA. The gate-source threshold voltage of this device is 1.2V and its drain-source on-resistance at 250mA is 400mΩ, which increases to 750mΩ at 430mA. This device is packaged in a compact RoHS-compliant SOT-363R package and features a maximum gate-source voltage of 4.5V and a maximum drain-source continuous current of 570mA.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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