X-On Electronics has gained recognition as a prominent supplier of MTD300N20J3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. MTD300N20J3 MOSFETs are a product manufactured by CYSTECH. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MTD300N20J3 CYSTECH

MTD300N20J3 electronic component of CYSTECH
MTD300N20J3 CYSTECH
MTD300N20J3 MOSFETs
MTD300N20J3  Semiconductors

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See Product Specifications
Part No. MTD300N20J3
Manufacturer: CYSTECH
Category: MOSFETs
Description: MOSFET N Trench 200V 8.3A (Tc) 2.5V @ 250uA 380 mΩ @ 3A,10V TO-252 RoHS
Datasheet: MTD300N20J3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Category
Rohs
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Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
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We are delighted to provide the MTD300N20J3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MTD300N20J3 and other electronic components in the MOSFETs category and beyond.

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The MTD300N20J3 is an N-Channel MOSFET device made by CYSTECH. It features a Trench technology structure and is RoHS compliant. Its 200V breakdown voltage and 8.3A (Tc) continuous drain current make it suitable for use in applications requiring low on-state resistance and good saturation performance. The device exhibits 2.5V gate-source threshold voltage and a gate-source capacitance of 250uA @ 380mO. This MOSFET can handle up to 3A drain current and 10V drain-source voltage, and it is provided in a TO-252 package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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