X-On Electronics has gained recognition as a prominent supplier of MTE65N20H8 MOSFETs across the USA, India, Europe, Australia, and various other global locations. MTE65N20H8 MOSFETs are a product manufactured by CYSTECH. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MTE65N20H8 CYSTECH

MTE65N20H8 electronic component of CYSTECH
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Part No.MTE65N20H8
Manufacturer: CYSTECH
Category: MOSFETs
Description: MOSFET N Trench 200V 24A (Tc) 4V @ 250uA 80 mΩ @ 11A,10V DFN 5x6 RoHS
Datasheet: MTE65N20H8 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
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We are delighted to provide the MTE65N20H8 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MTE65N20H8 and other electronic components in the MOSFETs category and beyond.

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The MTE65N20H8 is a N- channel enhancement type Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by CYSTECH. It has a voltage rating of 200V and current rating of 24A at 4V Temperature (Tc) with a maximum total gate charge of 250uA. It also has an on-state drain-source resistance of 80mO at 11A, 10V. It is an Dual Flat No-Lead (DFN) package with 5x6mm dimensions and is compliant with Restriction of Hazardous Substances (RoHS) directive.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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