DTM64311F
1GB - 240-Pin 1Rx8 Registered ECC DDR3 DIMM
Identification
DTM64311F 128Mx72
1GB 1Rx8 PC3-10600R-9-10-A0
Performance range
Clock / Module Speed / CL-t -t
RCD RP
667 MHz / PC3-10600 / 9-9-9
533 MHz / PC3-8500 / 8-8-8
533 MHz / PC3-8500 / 7-7-7
400 MHz / PC3-6400 / 6-6-6
Features Description
240-pin JEDEC-compliant DIMM, 133.35 mm wide by 30 mm
DTM64311F is a registered 128Mx72 memory module,
high
which conforms to JEDEC's DDR3, PC3-10600
standard. The assembly is Single-Rank. The Rank is
Operating Voltage: 1.5V 0.075
comprised of nine 128Mx8 DDR3-1333 Hynix SDRAMs.
I/O Type: SSTL_15
One 2K-bit EEPROM is used for Serial Presence
On-board I2C temperature sensor with integrated serial
Detect and a combination register/PLL, with Address
presence-detect (SPD) EEPROM.
and Command Parity, is also used.
Data Transfer Rate: 10.6 Gigabytes/sec
Both output driver strength and input termination
impedance are programmable to maintain signal
Data Bursts: 8 and burst chop 4 mode
integrity on the I/O signals in a Fly-by topology.
ZQ Calibration for Output Driver and On-Die Termination (ODT)
A thermal sensor accurately monitors the DIMM module
and can prevent exceeding the maximum operating
Programmable ODT / Dynamic ODT during Writes
temperature of 95C.
Programmable CAS Latency: 6, 7, 8, and 9
Bi-Directional Differential Data Strobe signals
SDRAM Addressing (Row/Col/Bank): 14/10/3
Fully RoHS Compliant
Pin Configuration Pin Description
Front Side Back Side Name Function
1 V 31 DQ25 61 A2 91 DQ41 121 V 151V 181A1 211V CB[7:0] Data Check Bits
REFDQ SS SS SS
2 V 32 V 62 V 92 V 122 DQ4 152DM3 182V 212DM5 DQ[63:0] Data Bits
SS SS DD SS DD
3 DQ0 33 /DQS3 63 CK1** 93 /DQS5123 DQ5 153/TDQS12 183V 213 /TDQS14 DQS[8:0], /DQS[8:0] Differential Data Strobes
DD
4 DQ1 34 DQS3 64 /CK1** 94 DQS5 124 V 154V 184CK0 214V DM[8:0] Data Mask
SS SS SS
5 V 35 V 65 V 95 V 125 DM0 155DQ30 185/CK0 215DQ46 /TDQS[17:9] Termination strobes
SS SS DD SS
6 /DQS0 36 DQ26 66 V 96 DQ42 126 /TDQS9 156DQ31 186V 216 DQ47 CK[1:0], /CK[1:0] Differential Clock Inputs
DD DD
7 DQS0 37 DQ27 67 V 97 DQ43 127 V 157V 187/EVENT 217V CKE[1:0] Clock Enables
REFCA SS SS SS
8 V 38 V 68 P _I 98 V 128 DQ6 158 CB4 188 A0 218 DQ52 /CAS Column Address Strobe
SS SS AR N SS
9 DQ2 39 CB0 69 VDD 99 DQ48 129 DQ7 159CB5 189V 219 DQ53 /RAS Row Address Strobe
DD
10 DQ3 40 CB1 70 A10/AP 100 DQ49 130 V 160V 190BA1 220V /S[3:0] Chip Selects
SS SS SS
11 V 41 V 71 BA0 101 V 131 DQ12 161DM8 191V 221DM6 /WE Write Enable
SS SS SS DD
12 DQ8 42 /DQS8 72 V 102 /DQS6132 DQ13 162/TDQS17 192/RAS 222/TDQS15A[15:0] Address Inputs
DD
13 DQ9 43 DQS8 73 /WE 103 DQS6 133 V 163V 193/S0 223V BA[2:0] Bank Addresses
SS SS SS
14 V 44 V 74 /CAS 104 V 134 DM1 164CB6 194V 224 DQ54 ODT[1:0] On Die Termination Inputs
SS SS SS DD
15 /DQS1 45 CB2 75 V 105 DQ50 135 /TDQS10 165CB7 195ODT0 225DQ55 SA[2:0] SPD Address
DD
16 DQS1 46 CB3 76 /S1** 106 DQ51 136 V 166V 196A13 226V SCL SPD Clock Input
SS SS SS
17 V 47 V 77 107 V 137 DQ14 167NC (TEST)197V 227 DQ60 SDA SPD Data Input/Output
SS SS ODT1** SS DD
18 DQ10 48 V 78 V 108 DQ56 138 DQ15 168 /RESET 198 /S3, NC** 228 DQ61 /EVENT Temperature Sensing
TT DD
19 DQ11 49 V 79 /S2, NC** 109 DQ57 139 V 169 199 V 229V /RESET Reset for register and DRAMs
TT SS CKE1** SS SS
20 V 50 CKE0 80 V 110 V 140 DQ20 170V 200 DQ36 230 DM7 PAR_IN Parity bit for Addr/Ctrl
SS SS SS DD
21 DQ16 51 V 81 DQ32 111 /DQS7 141 DQ21 171 A15 201 DQ37 231 /TDQS16 /ERR_OUT Error bit for Parity Error
DD
22 DQ17 52 BA2 82 DQ33 112 DQS7 142 V 172A14 202V 232V A12/BC Combination input: Addr12/Burst Chop
SS SS SS
23 V 53 /E _O 83 V 113 V 143 DM2 173V 203 DM4 233 DQ62 A10/AP Combination input: Addr10/Auto-precharge
SS RR UT SS SS DD
24 /DQS2 54 V 84 /DQS4 114 DQ58 144 /TDQS11 174 A12/BC 204 /TDQS13 234 DQ63 V Ground
DD SS
25 DQS2 55 A11 85 DQS4 115 DQ59 145 V 175A9 205V 235V V Power
SS SS SS DD
26 V 56 A7 86 V 116 V 146 DQ22 176V 206DQ38 236V V SPD EEPROM Power
SS SS SS DD DDSPD DDSPD
27 DQ18 57 V 87 DQ34 117 SA0 147 DQ23 177 A8 207 DQ39 237 SA1 V Reference Voltage for DQs
DD REFDQ
28 DQ19 58 A5 88 DQ35 118 SCL 148 V 178A6 208V 238SDA V Reference Voltage for CA
SS SS REFCA
29 V 59 A4 89 V 119 SA2 149 DQ28 179V 209DQ44 239V V Termination Voltage
SS SS DD SS TT
30 DQ24 60 V 90 DQ40 120 V 150 DQ29 180A3 210DQ45 240V NC No Connection
DD TT TT
** Not used
Document 06600, Revision A, 10-Sep-10 Dataram Corporation 2010 Page 1
DTM64311F
1GB - 240-Pin 1Rx8 Registered ECC DDR3 DIMM
Front view
133.35
[5.250]
9.50
[0.374]
30.00
[1.181]
17.30
[0.681]
5.00
2.50
[0.197]
[0.098]
5.175 47.00
71.00
[0.204] [1.850]
[2.795]
123.00
[4.843]
Back view Side view
3.94 Max
[0.155] Max
4.00 Min
[0.157] Min
1.27 .10
[0.0500 0.0040]
Notes
Tolerances on all dimensions except where otherwise
indicated are .13 (.005).
All dimensions are expressed: millimeters [inches]
Document 06600, Revision A, 10-Sep-10 Dataram Corporation 2010 Page 2