DTM64313I

DTM64313I 4GB - 240-Pin 2Rx4 Registered ECC DDR3 DIMM Identification DTM64313I 512Mx72 4GB 2Rx4 PC3-10600R-9-11-E2 Performance range Clock / Module Speed / CL-t -t RCD RP 667 MHz / PC3-10600 / 9-9-9 533 MHz / PC3-8500 / 8-8-8 533 MHz / PC3-8500 / 7-7-7 400 MHz / PC3-6400 / 6-6-6 Features Description 240-pin JEDEC-compliant DIMM, 133.35 mm wide by 30 mm high DTM64313I is a registered 512Mx72 memory module, which conforms to JEDEC s DDR3, PC3-10600 standard. Operating Voltage: 1.5V 0.075 The assembly is Dual-Rank. Each rank is comprised of I/O Type: SSTL 15 eighteen 256Mx4 DDR3 Samsung SDRAMs. One 2K-bit 2 EEPROM is used for Serial Presence Detect and a On-board I C temperature sensor with integrated Serial Presence- combination register/PLL, with Address and Command Detect (SPD) EEPROM Parity, is also used. Both output driver strength and input Data Transfer Rate: 10.6 Gigabytes/sec termination impedance are programmable to maintain Data Bursts: 8 and burst chop 4 mode signal integrity on the I/O signals. A thermal sensor accurately monitors the DIMM module ZQ Calibration for Output Driver and On-Die Termination (ODT) and can prevent exceeding the maximum operating Programmable ODT / Dynamic ODT during Writes temperature of 95C. Programmable CAS Latency: 6, 7, 8, and 9 Bi-directional Differential Data Strobe signals SDRAM Addressing (Row/Col/Bank): 14/11/3 Fully RoHS Compliant Pin Configuration Pin Description Front Side Back Side Name Function 1 V 31 DQ25 61 A2 91 DQ41 121 V 151 V 181 A1 211 V CB 7:0 Data Check Bits REFDQ SS SS SS 2 V 32 V 62 V 92 V 122 DQ4 152 DQS12 182 V 212 DQS14 DQ 63:0 Data Bits SS SS DD SS DD 3 DQ0 33 /DQS3 63 CK1* 93 /DQS5 123 DQ5 153 /DQS12 183 V 213 /DQS14 DQS 17:0 , /DQS 17:0 Differential Data Strobes DD 4 DQ1 34 DQS3 64 /CK1* 94 DQS5 124 V 154 V 184 CK0 214 V CK 1:0 , /CK 1:0 Differential Clock Inputs SS SS SS 5 V 35 V 65 V 95 V 125 DQS9 155 DQ30 185 /CK0 215 DQ46 CKE 1:0 Clock Enables SS SS DD SS 6 /DQS0 36 DQ26 66 V 96 DQ42 126 /DQS9 156 DQ31 186 V 216 DQ47 /CAS Column Address Strobe DD DD 7 DQS0 37 DQ27 67 V 97 DQ43 127 V 157 V 187 /EVENT 217 V /RAS Row Address Strobe REFCA SS SS SS 8 V 38 V 68 P I 98 V 128 DQ6 158 CB4 188 A0 218 DQ52 /S 3:0 Chip Selects SS SS AR N SS 9 DQ2 39 CB0 69 VDD 99 DQ48 129 DQ7 159 CB5 189 V 219 DQ53 /WE Write Enable DD 10 DQ3 40 CB1 70 A10/AP 100 DQ49 130 V 160 V 190 BA1 220 V A 15:0 Address Inputs SS SS SS 11 V 41 V 71 BA0 101 V 131 DQ12 161 DQS17 191 V 221 DQS15 BA 2:0 Bank Addresses SS SS SS DD 12 DQ8 42 /DQS8 72 V 102 /DQS6 132 DQ13 162 /DQS17 192 /RAS 222 /DQS15 ODT 1:0 On Die Termination Inputs DD 13 DQ9 43 DQS8 73 /WE 103 DQS6 133 V 163 V 193 /S0 223 V SA 2:0 SPD Address SS SS SS 14 V 44 V 74 /CAS 104 V 134 DQS10 164 CB6 194 V 224 DQ54 SCL SPD Clock Input SS SS SS DD 15 /DQS1 45 CB2 75 V 105 DQ50 135 /DQS10 165 CB7 195 ODT0 225 DQ55 SDA SPD Data Input/Output DD 16 DQS1 46 CB3 76 /S1 106 DQ51 136 V 166 V 196 A13 226 V /EVENT Temperature Sensing SS SS SS 17 V 47 V 77 ODT1 107 V 137 DQ14 167 NC (TEST) 197 V 227 DQ60 /RESET Reset for register and DRAMs SS SS SS DD 18 DQ10 48 V 78 V 108 DQ56 138 DQ15 168 /RESET 198 /S3, NC 228 DQ61 PAR IN Parity bit for Addr/Ctrl TT DD 19 DQ11 49 V 79 /S2, NC 109 DQ57 139 V 169 CKE1 199 V 229 V /ERR OUT Error bit for Parity Error TT SS SS SS 20 V 50 CKE0 80 V 110 V 140 DQ20 170 V 200 DQ36 230 DQS16 A12/BC Combination input: Addr12/Burst Chop SS SS SS DD 21 DQ16 51 V 81 DQ32 111 /DQS7 141 DQ21 171 A15 201 DQ37 231 /DQS16 A10/AP Combination input: Addr10/Auto-precharge DD 22 DQ17 52 BA2 82 DQ33 112 DQS7 142 V 172 A14 202 V 232 V V Ground SS SS SS SS 23 V 53 /E O 83 V 113 V 143 DQS11 173 V 203 DQS13 233 DQ62 V Power SS RR UT SS SS DD DD 24 /DQS2 54 V 84 /DQS4 114 DQ58 144 /DQS11 174 A12/BC 204 /DQS13 234 DQ63 V SPD EEPROM Power DD DDSPD 25 DQS2 55 A11 85 DQS4 115 DQ59 145 V 175 A9 205 V 235 V V Reference Voltage for DQs SS SS SS REFDQ 26 V 56 A7 86 V 116 V 146 DQ22 176 V 206 DQ38 236 V V Reference Voltage for CA SS SS SS DD DDSPD REFCA 27 DQ18 57 V 87 DQ34 117 SA0 147 DQ23 177 A8 207 DQ39 237 SA1 V Termination Voltage DD TT 28 DQ19 58 A5 88 DQ35 118 SCL 148 V 178 A6 208 V 238 SDA NC No Connection SS SS 29 V 59 A4 89 V 119 SA2 149 DQ28 179 V 209 DQ44 239 V SS SS DD SS 30 DQ24 60 V 90 DQ40 120 V 150 DQ29 180 A3 210 DQ45 240 V DD TT TT * Not used Document 06383, Revision A, 21-Jun-11, Dataram Corporation 2011 Page 1 DTM64313I 4GB - 240-Pin 2Rx4 Registered ECC DDR3 DIMM Front view 133.35 5.250 9.50 0.374 30.00 1.181 17.30 0.681 5.00 2.50 0.197 0.098 5.175 47.00 71.00 0.204 1.850 2.795 123.00 4.843 Back view Side view 3.94 Max 0.155 Max 4.00 Min 0.157 Min 1.27 .10 0.0500 0.0040 Notes Tolerances on all dimensions except where otherwise indicated are .13 (.005). All dimensions are expressed: millimeters inches Document 06383, Revision A, 21-Jun-11, Dataram Corporation 2011 Page 2