P-CHANNEL ENHANCEMENT
P-CHANNEL ENHANCEMENT
ZVP2110C
ZVP2110A
MODE VERTICAL DMOS FET
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
ISSUE 2 MARCH 94
FEATURES
FEATURES
* 100 Volt V
* 100 Volt V
DS
DS
*R =8
*R =8
DS(on)
DS(on)
G D
D G
S S
REFER TO ZVP2110A FOR GRAPHS
E-Line
E-Line
TO92 Compatible
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V -100 V
Drain-Source Voltage V -100 V
DS
DS
Continuous Drain Current at T =25C I -230 mA
Continuous Drain Current at T =25C I -230 mA
amb D
amb D
Pulsed Drain Current I -3 A
Pulsed Drain Current I -3 A
DM
DM
Gate Source Voltage V 20 V
Gate Source Voltage V 20 V
GS
GS
Power Dissipation at T =25C P 700 mW
Power Dissipation at T =25C P 700 mW
amb tot
amb tot
Operating and Storage Temperature Range T :T -55 to +150 C
Operating and Storage Temperature Range T :T -55 to +150 C j stg
j stg
ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated).
ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated).
amb
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown BV -100 V I =-1mA, V =0V
Drain-Source Breakdown BV -100 V I =-1mA, V =0V
DSS D GS
DSS D GS
Voltage
Voltage
Gate-Source Threshold V -1.5 -3.5 V ID=-1mA, V = V
Gate-Source Threshold V -1.5 -3.5 V ID=-1mA, V = V
GS(th) DS GS
GS(th) DS GS
Voltage
Voltage
Gate-Body Leakage I 20 nA V = 20V, V =0V
Gate-Body Leakage I 20 nA V = 20V, V =0V
GSS GS DS
GSS GS DS
Zero Gate Voltage Drain I -1 A V =-100 V, V =0
Zero Gate Voltage Drain I -1 A V =-100 V, V =0
DSS DS GS
DSS DS GS
Current -100 V =-80 V, V =0V, T=125C(2)
A
Current -100 A V =-80 V, V =0V, T=125C(2) DS GS
DS GS
On-State Drain Current(1) I -750 mA V =-25 V, V =-10V
On-State Drain Current(1) I -750 mA V =-25 V, V =-10V
D(on) DS GS
D(on) DS GS
Static Drain-Source On-State R 8 V =-10V,I =-375mA
Static Drain-Source On-State R 8 V =-10V,I =-375mA
DS(on) GS D
DS(on) GS D
Resistance (1)
Resistance (1)
Forward Transconductance g 125 mS V =-25V,I =-375mA
Forward Transconductance g 125 mS V =-25V,I =-375mA
fs DS D
fs DS D
(1)(2)
(1)(2)
Input Capacitance (2) C 100 pF
Input Capacitance (2) C 100 pF
iss
iss
Common Source Output C 35 pF V =-25V, V =0V, f=1MHz
Common Source Output C 35 pF V =-25V, V =0V, f=1MHz
oss DS GS
oss DS GS
Capacitance (2)
Capacitance (2)
Reverse Transfer C 10 pF
Reverse Transfer C 10 pF
rss
rss
Capacitance (2)
Capacitance (2)
Turn-On Delay Time (2)(3) t 7ns
Turn-On Delay Time (2)(3) t 7ns d(on)
d(on)
Rise Time (2)(3) t 15 ns
Rise Time (2)(3) t 15 ns r
r
V -25V, I =-375mA
V -25V, I =-375mA
DD D
DD D
Turn-Off Delay Time (2)(3) t 12 ns
Turn-Off Delay Time (2)(3) t 12 ns
d(off)
d(off)
Fall Time (2)(3) t 15 ns
Fall Time (2)(3) t 15 ns
f
f
(1) Measured under pulsed conditions. Width=300s. Duty cycle 2%
(1) Measured under pulsed conditions. Width=300s. Duty cycle 2%
(2) Sample test.
(2) Sample test.
(
3-424 3-421 3
)
Switching times measured with 50 source impedance and <5ns rise time on a pulse generator ID(On) - Drain Current (Amps)
Normalised RDS(on) and VGS(th)
ID(On) Drain Current (Amps)
ID(On) - Drain Current (Amps)
gfs-Transconductance (mS)
C-Capacitance (pF)
VGS-Gate Source Voltage (Volts)
gfs-Transconductance (mS)
Gate Threshold Voltage VGS(th)
ZVP2110A ZVP2110A
TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS
VGS=
VGS=
-1.6
-20V
-1.6 -20V
-16V
-16V
-1.4
-1.4
-12V
250
250
-12V
-1.2 -10V
-1.2
-10V
-9V VDS=-10V
200
-1.0 200
-9V
-1.0
-8V
-8V
-0.8
-0.8 150
150 VDS=-10V
-7V
-7V
-0.6
-0.6
-6V
100
-6V 100
-0.4
-0.4
-5V
-5V
-4.5V 50
-0.2 50
-4V
-0.2
-4.5V
-4V
-4V
0 -3.5V
0
-3.5V 0
0
0 -10 -20 -30 -40 -50
0-2 -4 -6 -8 -10
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 -2 -4 -6 -8 -10
VGS-Gate Source Voltage (Volts)
VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) ID- Drain Current (Amps)
Output Characteristics Saturation Characteristics Transconductance v drain current Transconductance v gate-source voltage
0
-8
-1.6
ID=- 0.5A
80
-2
-1.4
VDS=
-4
-6 -50V -100V
-1.2 -25V
60
VDS=-10V
-6
-1.0
Ciss
-8
-4
-0.8
40
-10
-0.6
ID=
-0.5A
-12
-2 -0.4
20
-0.25A Coss
-14
-0.2
Crss
-0.1A
0 -16
0
0
0 -20 -40 -60 -80 -100 00.5 1.0 1.5 2.0 2.5 3.0
0-2 -4 -6 -8 -10 0-2 -4 -6 -8 -10
VDS-Drain Source Voltage (Volts)
Q-Gate Charge (nC)
VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Capacitance v drain-source voltage Gate charge v gate-source voltage
Transfer Characteristics
Voltage Saturation Characteristics
2.6
100
2.4
2.2
VGS=-4V
VGS=-10V
ID=-0.375A
2.0
1.8
-5V
-7V
1.6
10
-10V
1.4
1.2
-20V
VGS=VDS
1.0
ID=-1mA
0.8
1 0.6
10 100 1000 -40 -20 0 20 40 60 80 100 120 140 160 180C
ID-Drain Current (mA)
On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature
3-422 3-423
Drain-Source Resistance RDS(on)
VDS-Drain Source Voltage (Volts)
RDS(on)-Drain Source On Resistance ()