X-On Electronics has gained recognition as a prominent supplier of 012111XB MOSFETs across the USA, India, Europe, Australia, and various other global locations. 012111XB MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

012111XB Diodes Incorporated

012111XB electronic component of Diodes Incorporated
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Part No.012111XB
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: ZVP2110A TRANSISTORS-M*
Datasheet: 012111XB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.904 ea
Line Total: USD 0.9 
Availability - 0
Ship by Tue. 24 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 24 Dec
MOQ : 1
Multiples : 1
1 : USD 0.904
10 : USD 0.452
25 : USD 0.4068
50 : USD 0.339
75 : USD 0.3051

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the 012111XB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 012111XB and other electronic components in the MOSFETs category and beyond.

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P-CHANNEL ENHANCEMENT P-CHANNEL ENHANCEMENT ZVP2110C ZVP2110A MODE VERTICAL DMOS FET MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 ISSUE 2 MARCH 94 FEATURES FEATURES * 100 Volt V * 100 Volt V DS DS *R =8 *R =8 DS(on) DS(on) G D D G S S REFER TO ZVP2110A FOR GRAPHS E-Line E-Line TO92 Compatible TO92 Compatible ABSOLUTE MAXIMUM RATINGS. ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V -100 V Drain-Source Voltage V -100 V DS DS Continuous Drain Current at T =25C I -230 mA Continuous Drain Current at T =25C I -230 mA amb D amb D Pulsed Drain Current I -3 A Pulsed Drain Current I -3 A DM DM Gate Source Voltage V 20 V Gate Source Voltage V 20 V GS GS Power Dissipation at T =25C P 700 mW Power Dissipation at T =25C P 700 mW amb tot amb tot Operating and Storage Temperature Range T :T -55 to +150 C Operating and Storage Temperature Range T :T -55 to +150 C j stg j stg ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb amb PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown BV -100 V I =-1mA, V =0V Drain-Source Breakdown BV -100 V I =-1mA, V =0V DSS D GS DSS D GS Voltage Voltage Gate-Source Threshold V -1.5 -3.5 V ID=-1mA, V = V Gate-Source Threshold V -1.5 -3.5 V ID=-1mA, V = V GS(th) DS GS GS(th) DS GS Voltage Voltage Gate-Body Leakage I 20 nA V = 20V, V =0V Gate-Body Leakage I 20 nA V = 20V, V =0V GSS GS DS GSS GS DS Zero Gate Voltage Drain I -1 A V =-100 V, V =0 Zero Gate Voltage Drain I -1 A V =-100 V, V =0 DSS DS GS DSS DS GS Current -100 V =-80 V, V =0V, T=125C(2) A Current -100 A V =-80 V, V =0V, T=125C(2) DS GS DS GS On-State Drain Current(1) I -750 mA V =-25 V, V =-10V On-State Drain Current(1) I -750 mA V =-25 V, V =-10V D(on) DS GS D(on) DS GS Static Drain-Source On-State R 8 V =-10V,I =-375mA Static Drain-Source On-State R 8 V =-10V,I =-375mA DS(on) GS D DS(on) GS D Resistance (1) Resistance (1) Forward Transconductance g 125 mS V =-25V,I =-375mA Forward Transconductance g 125 mS V =-25V,I =-375mA fs DS D fs DS D (1)(2) (1)(2) Input Capacitance (2) C 100 pF Input Capacitance (2) C 100 pF iss iss Common Source Output C 35 pF V =-25V, V =0V, f=1MHz Common Source Output C 35 pF V =-25V, V =0V, f=1MHz oss DS GS oss DS GS Capacitance (2) Capacitance (2) Reverse Transfer C 10 pF Reverse Transfer C 10 pF rss rss Capacitance (2) Capacitance (2) Turn-On Delay Time (2)(3) t 7ns Turn-On Delay Time (2)(3) t 7ns d(on) d(on) Rise Time (2)(3) t 15 ns Rise Time (2)(3) t 15 ns r r V -25V, I =-375mA V -25V, I =-375mA DD D DD D Turn-Off Delay Time (2)(3) t 12 ns Turn-Off Delay Time (2)(3) t 12 ns d(off) d(off) Fall Time (2)(3) t 15 ns Fall Time (2)(3) t 15 ns f f (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (2) Sample test. ( 3-424 3-421 3 ) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator ID(On) - Drain Current (Amps) Normalised RDS(on) and VGS(th) ID(On) Drain Current (Amps) ID(On) - Drain Current (Amps) gfs-Transconductance (mS) C-Capacitance (pF) VGS-Gate Source Voltage (Volts) gfs-Transconductance (mS) Gate Threshold Voltage VGS(th) ZVP2110A ZVP2110A TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS VGS= VGS= -1.6 -20V -1.6 -20V -16V -16V -1.4 -1.4 -12V 250 250 -12V -1.2 -10V -1.2 -10V -9V VDS=-10V 200 -1.0 200 -9V -1.0 -8V -8V -0.8 -0.8 150 150 VDS=-10V -7V -7V -0.6 -0.6 -6V 100 -6V 100 -0.4 -0.4 -5V -5V -4.5V 50 -0.2 50 -4V -0.2 -4.5V -4V -4V 0 -3.5V 0 -3.5V 0 0 0 -10 -20 -30 -40 -50 0-2 -4 -6 -8 -10 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 -2 -4 -6 -8 -10 VGS-Gate Source Voltage (Volts) VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) ID- Drain Current (Amps) Output Characteristics Saturation Characteristics Transconductance v drain current Transconductance v gate-source voltage 0 -8 -1.6 ID=- 0.5A 80 -2 -1.4 VDS= -4 -6 -50V -100V -1.2 -25V 60 VDS=-10V -6 -1.0 Ciss -8 -4 -0.8 40 -10 -0.6 ID= -0.5A -12 -2 -0.4 20 -0.25A Coss -14 -0.2 Crss -0.1A 0 -16 0 0 0 -20 -40 -60 -80 -100 00.5 1.0 1.5 2.0 2.5 3.0 0-2 -4 -6 -8 -10 0-2 -4 -6 -8 -10 VDS-Drain Source Voltage (Volts) Q-Gate Charge (nC) VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Capacitance v drain-source voltage Gate charge v gate-source voltage Transfer Characteristics Voltage Saturation Characteristics 2.6 100 2.4 2.2 VGS=-4V VGS=-10V ID=-0.375A 2.0 1.8 -5V -7V 1.6 10 -10V 1.4 1.2 -20V VGS=VDS 1.0 ID=-1mA 0.8 1 0.6 10 100 1000 -40 -20 0 20 40 60 80 100 120 140 160 180C ID-Drain Current (mA) On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature 3-422 3-423 Drain-Source Resistance RDS(on) VDS-Drain Source Voltage (Volts) RDS(on)-Drain Source On Resistance ()

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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