PART OBSOLETE - USE FCX591A 2DB1119S PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT89-3L Ideally Suited for Automated Assembly Processes Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Switching or Amplification Applications Moisture Sensitivity: Level 1 per J-STD-020 Lead Free By Design/RoHS Compliant (Note 1) Terminals: Finish Matte Tin annealed over Copper leadframe Gree Device (Note 2) (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.055 grams (approximate) 3 E COLLECTOR 2,4 C 4 2 C 1 BASE 1 B 3 EMITTER Top View Top View Device Schematic Pin Out Configuration Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -25 V V CBO Collector-Emitter Voltage -25 V V CEO Emitter-Base Voltage -5 V V EBO Peak Pulse Current I -2 A CM Continuous Collector Current I -1 A C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 1 W A D 125 C/W Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C R A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at 2DB1119S Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V -25 V I = -10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V -25 V I = -1mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I = -10A, I = 0 (BR)EBO E C Collector Cut-Off Current I -0.1 A V = -20V, I = 0 CBO CB E Emitter Cut-Off Current -0.1 A I V = -4V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage -0.15 -0.7 V V I = -500mA, I = -50mA CE(SAT) C B Base-Emitter Saturation Voltage -0.85 -1.2 V V I = -500mA, I = -50mA BE(SAT) C B 140 280 V = -2V, I = -50mA CE C DC Current Gain h FE 40 V = -2V, I = -1A CE C SMALL SIGNAL CHARACTERISTICS V = -10V, I = -50mA CE C Transition Frequency 200 MHz fT f = 100MHz V = -10V, I = 0, CB E Output Capacitance 12 pF C ob f = 1MHz Notes: 4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 0 0 1 2 3 4 5 0 25 50 75 100 125 150 -V , COLLECTOR-EMITTER VOLTAGE (V) T , AMBIENT TEMPERATURE (C) CE A Fig. 1 Power Dissipation Fig. 2 Typical Collector Current vs. Ambient Temperature (Note 3) vs. Collector-Emitter Voltage 2 of 5 June 2021 2DB1119S Diodes Incorporated www.diodes.com Document number: DS31298 Rev. 3 - 4 OBSOLETE PART DISCONTINUED P , POWER DISSIPATION (W) D