2DB1182Q 32V PNP MEDIUM POWER TRANSISTOR IN TO252 Features Mechanical Data BV > -32V Case: TO252 (DPAK) CEO I = -2A High Continuous Collector Current Case Material: Molded Plastic,Gree Molding Compound. C I = -3A Peak Pulse Current UL Flammability Classification Rating 94V-0 CM Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Low Collector-Emitter Saturation Voltage Terminals: Finish Matte Tin Plated Leads, Solderable e3 Ideal for Medium Power Switching or Amplification Applications per MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.34 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability TO252 (DPAK) C C B B E E Top View Device Schematic Pin Out Configuration Top view Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel 2DB1182Q-13 AEC-Q101 2DB1182Q 13 16 2,500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See 2DB1182Q Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -40 V CBO Collector-Emitter Voltage V -32 V CEO Emitter-Base Voltage V -5 V EBO Continuous Collector Current -2 A I C Peak Pulse Collector Current -3 A I CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 1.2 W D Power Dissipation T = +25C (Note 6) P 15 W L D Thermal Resistance, Junction to Ambient (Note 5) 104 C/W R JA Thermal Resistance, Junction to Lead (Note 6) 8.3 C/W R JL Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Note: 5. For a device mounted with the exposed collector pad on minimum recommended pad (MRP) layout 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Thermal resistance from junction to solder-point (on the exposed collector pad). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Thermal Characteristics 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 R (t) = r(t) * R JA JA R = 110C/W JA D = 0.02 0.01 P(pk) D = 0.01 t 1 t D = 0.005 2 T - T = P * R (t) J A JA Duty Cycle, D = t /t 12 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000 t , PULSE DURATION TIME (s) 1 Figure 1 Transient Thermal Response 2 of 6 2DB1182Q November 2014 Diodes Incorporated www.diodes.com Document number: DS35651 Rev. 3 - 2 r(t), TRANSIENT THERMAL RESISTANCE