2DB1184Q
50V PNP MEDIUM POWER TRANSISTOR IN TO252
Features Mechanical Data
BV > -50V
CEO
Case: TO252 (DPAK)
I = -3A High Continuous Collector Current
C
Case Material: Molded Plastic,Gree Molding Compound.
I = -4.5A Peak Pulse Current
CM
UL Flammability Classification Rating 94V-0
Epitaxial Planar Die Construction
Moisture Sensitivity: Level 1 per J-STD-020
Low Collector-Emitter Saturation Voltage
Terminals: Finish Matte Tin Plated Leads, Solderable per MIL-
Ideal for Medium Power Switching or Amplification Applications
STD-202, Method 208 e3
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Weight: 0.34 grams (approximate)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
TO252 (DPAK)
C
C
B
B
E
E
Top View Device Schematic Pin Out Configuration
Top view
Ordering Information (Note 4)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
2DB1184Q-13 AEC-Q101 2DB1184Q 13 16 2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
2DB1184Q
Absolute Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage V -60 V
CBO
Collector-Emitter Voltage V -50 V
CEO
Emitter-Base Voltage V -5 V
EBO
Continuous Collector Current I -3 A
C
Peak Pulse Collector Current -4.5 A
I
CM
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P 1.2 W
D
(Note 6) 15 W
Power Dissipation @T = +25C P
L D
Thermal Resistance, Junction to Lead (Note 5) 104 C/W
R
JA
Thermal Resistance, Junction to Ambient (Note 6) 8.3 C/W
R
JL
Operating and Storage Temperature Range T , T -55 to +150 C
J STG
ESD Ratings (Note 7)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Note: 5. For a device mounted with the exposed collector pad on minimum recommended pad (MRP) layout 1oz copper that is on a single-sided
1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R (t) = r(t) * R
JA JA
R = 110C/W
JA
D = 0.02
0.01
P(pk)
D = 0.01
t
1
t
2
D = 0.005
T - T = P * R (t)
JA JA
Duty Cycle, D = t /t
12
D = Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
t , PULSE DURATION TIME (s)
1
Figure 1 Transient Thermal Response
2 of 6 May 2014
2DB1184Q
Diodes Incorporated
www.diodes.com
Document number: DS31504 Rev. 5 - 2
r(t), TRANSIENT THERMAL RESISTANCE