EMITTER PART OBSOLETE - USE FCX718 2DB1424R PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT89-3L Complementary NPN Type Available (2DD2150) Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes Moisture Sensitivity: Level 1 per J-STD-020D Ideal for Medium Power Switching or Amplification Applications Terminals: Finish Matte Tin annealed over Copper leadframe Lead Free By Design/RoHS Compliant (Note 1) (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Gree Device (Note 2) Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.072 grams (approximate) 2,4 1 3 Top View Device Schematic Pin Out Configuration Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -20 V CBO Collector-Emitter Voltage V -20 V CEO Emitter-Base Voltage V -6 V EBO Peak Pulse Current I -5 A CM Continuous Collector Current -3 A I C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 1 W A D 125 C/W Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C R A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V -20 V I = -50A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V -20 V I = -1mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage -6 V V I = -50A, I = 0 (BR)EBO E C Collector Cut-Off Current -0.1 A I V = -20V, I = 0 CBO CB E Emitter Cut-Off Current -0.1 I A V = -5V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage -0.18 -0.5 V V I = -2A, I = -0.1A CE(SAT) C B DC Current Gain 180 390 h V = -2V, I = -0.1A FE CE C SMALL SIGNAL CHARACTERISTICS V = -10V, I = 0, CB E Output Capacitance 28 pF Cobo f = 1MHz V = -2V, I = 0.1A, CE E Current Gain-Bandwidth Product 220 MHz f T f = 100MHz Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at 2DB1424R 1.0 2.0 0.8 1.6 0.6 1.2 0.4 0.8 R = 125C/W 0.4 0.2 JA 0 0 0 25 50 75 100 125 150 0 1 2 3 4 5 T , AMBIENT TEMPERATURE (C) -V , COLLECTOR EMITTER VOLTAGE (V) CE A Fig. 2 Typical Collector Current Fig. 1 Power Dissipation vs. vs. Collector-Emitter Voltage Ambient Temperature (Note 3) 500 0.6 V = -2V CE T = 150C A 0.5 400 I /I = 20 CB T = 85C 0.4 A 300 0.3 T = 25C A 200 0.2 T = 150C A T = 85C A T = -55C A 100 0.1 T = 25C A T = -55C A 0 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -I , COLLECTOR CURRENT (A) -I , COLLECTOR CURRENT (A) C C Fig. 4 Typical Collector-Emitter Saturation Voltage Fig. 3 Typical DC Current Gain vs. Collector Current vs. Collector Current 1.2 1.2 V = -2V CE 1.0 1.0 0.8 0.8 T = -55C A T = -55C A 0.6 0.6 T = 25C A T = 25C A T = 85C A T = 85C 0.4 0.4 A T = 150C A T = 150C A 0.2 0.2 I /I = 20 CB 0 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -I , COLLECTOR CURRENT (A) -I , COLLECTOR CURRENT (A) C C Fig. 6 Typical Base-Emitter Saturation Voltage Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current vs. Collector Current 2 of 5 June 2021 2DB1424R Diodes Incorporated www.diodes.com Document number: DS31329 Rev. 3 - 4 OBSOLETE PART DISCONTINUED h , DC CURRENT GAIN FE -V , BASE-EMITTER TURN-ON VOLTAGE (V) P , POWER DISSIPATION (W) D BE(ON) -V , COLLECTOR-EMITTER CE(SAT) -V , BASE-EMITTER SATURATION VOLTAGE(V) -I , COLLECTOR CURRENT (A) BE(SAT) C SATURATION VOLTAGE (V)