PART OBSOLETE - USE ZUMT717 2DB1689 LOW V PNP SURFACE MOUNT TRANSISTOR CE(SAT) Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-323 Low Collector-Emitter Saturation Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideal for Low Power Amplification and Switching Moisture Sensitivity: Level 1 per J-STD-020D Complementary NPN Type Available (2DD2652) Terminals: Finish Matte Tin annealed over Alloy42 leadframe. Ultra-Small Surface Mount Package Solderable per MIL-STD-202, Method 208 Lead Free By Design/RoHS Compliant (Note 1) Terminal Connections: See Diagram Green Devic (Note 2) Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) C B E Top View Device Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -15 V V CBO Collector-Emitter Voltage -12 V V CEO Emitter-Base Voltage -6 V V EBO Collector Current - Continuous -1.5 A I C Peak Pulse Collector Current -3 A I CM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 300 mW A D 417 C/W Thermal Resistance, Junction to Ambient (Note 3) T = 25C R A JA Power Dissipation (Note 4) T = 25C P 500 mW A D 250 C/W Thermal Resistance, Junction to Ambient (Note 4) T = 25C R A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Conditions OFF CHARACTERISTICS Collector-Base Breakdown Voltage V -15 V I = -10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage (Note 5) V -12 V I = -1mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage -6 V V(BR)EBO IE = -10A, IC = 0 Collector Cut-Off Current -0.1 A I V = -15V, I = 0 CBO CB E Emitter Cut-Off Current -0.1 A I V = -6V, I = 0 EBO EB C ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage -110 -200 mV V I = -500mA, I = -25mA CE(SAT) C B DC Current Gain 270 680 h V = -2V, I = -200mA FE CE C SMALL SIGNAL CHARACTERISTICS V = -10V, I = 0, CB E Output Capacitance C 8.5 pF obo f = 1MHz V = -2V, I = -100mA, CE C Current Gain-Bandwidth Product 300 MHz f T f = 100MHz Notes: 1. No purposefully added lead. 2. Diodes Inc.s Green policy can be found on our website at 2DB1689 0.6 1.2 I = -5mA 1.0 0.5 B I = -4mA B 0.4 0.8 I = -3mA B 0.3 (Note 4) 0.6 I = -2mA B 0.2 (Note 3) 0.4 I = -1mA B 0.1 0.2 0 0 0 1 2 3 4 5 0 25 50 150 175 200 75 100 125 -V , COLLECTOR-EMITTER VOLTAGE (V) T , AMBIENT TEMPERATURE (C) CE A Fig. 2 Typical Collector Current Fig. 1 Power Dissipation vs. Ambient Temperature vs. Collector-Emitter Voltage 1,000 1 T = 150C A V = -2V CE T = 85C A T = 25C I /I = 20 A CB T = -55C A T = 150C A T = 85C 0.1 A 100 T = 25C A T = -55C A 10 0.01 0.1 1 10 100 1,000 10,000 0.1 1 10 100 1,000 10,000 -I , COLLECTOR CURRENT (mA) -I , COLLECTOR CURRENT (mA) C C Fig. 3 Typical DC Current Gain vs. Collector Current Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 1.2 V = -2V CE I /I = 20 CB 1.0 1.0 0.8 0.8 T = -55C T = -55C A A 0.6 0.6 T = 25C A T = 25C A 0.4 0.4 T = 85C A T = 85C A T = 150C 0.2 A 0.2 T = 150C A 0 0 0.1 1 10 100 1,000 10,000 0.1 1 10 100 1,000 10,000 -I , COLLECTOR CURRENT (mA) -I , COLLECTOR CURRENT (mA) C C Fig. 5 Typical Base-Emitter Turn-On Voltage Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current vs. Collector Current 2 of 5 May 2021 2DB1689 Diodes Incorporated www.diodes.com Document number: DS31639 Rev. 3 - 4 OBSOLETE PART DISCONTINUED -V , BASE-EMITTER TURN-ON VOLTAGE (V) h , DC CURRENT GAIN BE(ON) P , POWER DISSIPATION (W) FE D -V , COLLECTOR-EMITTER CE(SAT) -V , BASE-EMITTER SATURATION VOLTAGE (V) BE(SAT) -I , COLLECTOR CURRENT (A) SATURATION VOLTAGE (V) C