EMITTER 2DB1714 LOW V PNP SURFACE MOUNT TRANSISTOR CE(SAT) Features Mechanical Data Epitaxial Planar Die Construction Case: SOT89-3L Ideally Suited for Automated Assembly Processes Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Switching or Amplification Applications Moisture Sensitivity: Level 1 per J-STD-020D Complementary NPN Type (2DD2679) Available Terminals: Finish Matte Tin annealed over Copper leadframe Lead Free By Design/RoHS Compliant (Note 1) (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Gree Device (Note 2) Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072 grams (approximate) 2,4 1 3 Top View Device Schematic Pin Out Configuration Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -30 V V CBO Collector-Emitter Voltage V -30 V CEO Emitter-Base Voltage V -6 V EBO Peak Pulse Current I -4 A CM Continuous Collector Current I -2 A C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 0.9 W A D 139 C/W Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C R A JA Power Dissipation (Note 4) T = 25C P 2 W A D Thermal Resistance, Junction to Ambient Air (Note 4) T = 25C 62.5 C/W A R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Conditions OFF CHARACTERISTICS Collector-Base Breakdown Voltage V -30 V I = -10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage (Note 5) V -30 V I = -1mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -6 V I = -10A, I = 0 (BR)EBO E C Collector Cut-Off Current I -0.1 A V = -30V, I = 0 CBO CB E Emitter Cut-Off Current -0.1 I A V = -6V, I = 0 EBO EB C ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage -370 mV V I = -1.5A, I = -75mA CE(SAT) C B DC Current Gain 270 680 h V = -2V, I = -200mA FE CE C SMALL SIGNAL CHARACTERISTICS V = -10V, I = 0, CB E Output Capacitance C 16 pF obo f = 1MHz V = -2V, I = -100mA, CE C Current Gain-Bandwidth Product 200 MHz f T f = 100MHz Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at 2DB1714 2.0 10 Pw = 10ms 1.6 1 Pw = 100ms 1.2 DC 0.1 0.8 0.01 0.4 0.001 0 0 25 50 75 100 125 150 0.1 1 10 100 T , AMBIENT TEMPERATURE (C) -V , COLLECTOR-EMITTER VOLTAGE (V) A CE Fig. 2 Typical Collector Current Fig. 1 Power Dissipation vs. vs. Collector-Emitter Voltage (Note 3) Ambient Temperature 1.6 1,000 T = 150C A 1.4 T = 25C A I = -5mA T = 85C B A 1.2 T = -55C A 1.0 I = -4mA B 0.8 100 I = -3mA B 0.6 I = -2mA B 0.4 I = -1mA V = -2V B CE 0.2 0 10 1 10 100 1,000 10,000 01 2 3 4 5 -I , COLLECTOR CURRENT (mA) -V , COLLECTOR-EMITTER VOLTAGE (V) C CE Fig. 4 Typical DC Current Gain vs. Collector Current Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage 10 1.2 V = -2V CE 1.0 I/I = 20 CB 1 0.8 T = 150C A T = -55C A T = 85C A 0.1 0.6 T = 25C A T = 25C A T = -55C A 0.4 T = 85C A 0.01 0.2 T = 150C A 0.001 0 1 10 100 1,000 10,000 1 10 100 1,000 10,000 -I , COLLECTOR CURRENT (mA) -I , COLLECTOR CURRENT (mA) C C Fig. 5 Typical Collector-Emitter Saturation Voltage Fig. 6 Typical Base-Emitter Turn-On Voltage vs. Collector Current vs. Collector Current 2 of 4 December 2008 2DB1714 Diodes Incorporated www.diodes.com Document number: DS31610 Rev. 2 - 2 NEW PRODUCT -V , COLLECTOR-EMITTER CE(SAT) SATURATION VOLTAGE (V) -I , COLLECTOR CURRENT (A) P , POWER DISSIPATION (mW) C D -V , BASE-EMITTER TURN-ON VOLTAGE (V) h, DC CURRENT GAIN BE(ON) -I , COLLECTOR CURRENT (A) FE C