2DC4617Q/R/S NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Ultra Miniature Surface Mount Package SOT-523 Complementary PNP Type Available (2DA1774Q,R,S) Dim Min Max Typ Lead Free/RoHS Compliant (Note 3) A A 0.15 0.30 0.22 Gree Device (Note 4 and 5) C B 0.75 0.85 0.80 Mechanical Data C 1.45 1.75 1.60 B C D 0.50 Case: SOT-523 Case Material: Molded Plastic. UL Flammability B E G 0.90 1.10 1.00 Classification Rating 94V-0 G H 1.50 1.70 1.60 Moisture Sensitivity: Level 1 per J-STD-020C H J 0.00 0.10 0.05 Terminal Connections: See diagram K N K 0.60 0.80 0.75 Terminals: Solderable per MIL-STD-202, Method 208 M Lead Free Plating (Matte Tin annealed over Alloy 42 L 0.10 0.30 0.22 leadframe). J M 0.10 0.20 0.12 D L Marking Information: (See Page 3): 2DC4617Q: 8D N 0.45 0.65 0.50 2DC4617R: 8E 2DC4617S: 8F 0 8 Ordering Information: See Page 3 All Dimensions in mm Weight: 0.002 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage 50 V V CEO Emitter-Base Voltage V 7.0 V EBO Collector Current - Continuous (Note 1) I 150 mA C Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 1) P 150 mW d Thermal Resistance, Junction to Ambient (Note 1) 833 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage 60 V V I = 50A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 50 V I = 1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 7.0 V I = 50A, I = 0 (BR)EBO E C Collector Cutoff Current I 100 nA V = 60V CBO CB Emitter Cutoff Current I 100 nA V = 7.0V EBO EB ON CHARACTERISTICS (Note 2) DC Current Gain 2DC4617Q 120 270 2DC4617R h 180 390 V = 6.0V, I = 1.0mA FE CE C 2DC4617S 270 560 Collector-Emitter Saturation Voltage V 0.4 V I = 50mA, I = 5.0mA CE(SAT) C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 2.0 3.5 pF V = 12V, f = 1.0MHz, I = 0 obo CB E Current Gain-Bandwidth Product 180 MHz f V = 12V, I = -2mA, f = 1MHz T CE E Current Gain-Bandwidth Product 180 Typ. MHz f V = 12V, I = 0A, f = 1MHz T CE E V = 12V, I = -2.0mA, CE C Current Gain-Bandwidth Product f 180 Typ. MHz T f = 100MHz Notes: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at 250 0.4 I Note 1 C = 20 I B 200 0.3 150 0.2 T = 25C A 100 T = 150C A 0.1 50 T = -50C A 0 0 0 100 200 0.1 1 10 100 1,000 I , COLLECTOR CURRENT (mA) T , AMBIENT TEMPERATURE (C) A C Fig. 1 Power Derating Curve Fig. 2 Collector Emitter Saturation Voltage vs. Collector Current 1,000 V = 5V CE 100 10 1 110 100 I , COLLECTOR CURRENT (mA) C Fig. 3 Gain Bandwidth Product vs. Collector Current 2DC4617Q/R/S DS30252 Rev. 9 - 2 2 of 3 Diodes Incorporated www.diodes.com f, GAIN BANDWIDTH PRODUCT (MHz) P , POWER DISSIPATION (mW) T d V, COLLECTOR TO EMITTER CE(SAT) SATURATION VOLTAGE (V)