8D 8D 8D 2DC4617QLP 50V NPN SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data BV > 50V Case: X1-DFN1006-3 CEO I = 100mA High Collector Current C Case Material: Molded Plastic,Gree Molding Compound. P = 1000mW Power Dissipation D UL Flammability Classification Rating 94V-0 2 0.60mm Package Footprint, 13 times Smaller than SOT23 Moisture Sensitivity: Level 1 per J-STD-020 0.5mm Height Package Minimizing Off-Board Profile Terminals: Finish NiPdAu. Complementary PNP Type 2DA1774QLP Solderable per MIL-STD-202, Method 208 e4 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.0009 grams (Approximate) Halogen and Antimony Free,Gree Device (Note 3) Qualified to AEC-Q101Standards for High Reliability C X1-DFN1006-3 B B C E E Top View Device Symbol Bottom View Device Schematic Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel 2DC4617QLP-7 8D 7 8 3,000 2DC4617QLP-7B 8D 7 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See 2DC4617QLP Absolute Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 50 V CEO Emitter-Base Voltage V 5.0 V EBO Collector Current I 100 mA C Peak Collector Current I 200 mA CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 400 Power Dissipation mW P D (Note 6) 1000 (Note 5) 310 Thermal Resistance, Junction to Ambient C/W R JA (Note 6) 120 Thermal Resistance, Junction to Lead (Note 7) 120 C/W R JL Operating and Storage and Temperature Range -55 to +150 C T , T J STG ESD Ratings (Note 8) JEDEC Class Characteristic Symbol Value Unit Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 200 V B Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Collector-Base Breakdown Voltage 50 V BV I = 50A, I = 0 CBO C E Collector-Emitter Breakdown Voltage 50 V BV I = 1.0mA, I = 0 CEO C B Emitter-Base Breakdown Voltage 5.0 V BV I = 50A, I = 0 EBO E C 100 nA V = 30V CB Collector Cutoff Current I CBO 5 A V = 30V, T = +150C CB A Emitter Cutoff Current 100 nA I V = 4.0V EBO EB ON CHARACTERISTICS (Note 9) DC Current Gain 120 270 h V = 6.0V, I = 1.0mA FE CE C Collector-Emitter Saturation Voltage 0.2 V V I = 50mA, I = 5.0mA CE(SAT) C B SMALL SIGNAL CHARACTERISTICS Output Capacitance 3.5 pF C V = 12V, f = 1.0MHz, I = 0 obo CB E V = 12V, I = 2.0mA, CE C Current Gain-Bandwidth Product f 100 MHz T f = 100MHz Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper. 7. Thermal resistance from junction to solder-point (on the exposed collector pad). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 9. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. 2 of 5 2DC4617QLP May 2015 Diodes Incorporated www.diodes.com Document number: DS31439 Rev. 5 - 2