X-On Electronics has gained recognition as a prominent supplier of 2DC4617R-7-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2DC4617R-7-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2DC4617R-7-F Diodes Incorporated

2DC4617R-7-F electronic component of Diodes Incorporated
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Part No.2DC4617R-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT NPN BIPOLAR
Datasheet: 2DC4617R-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.132 ea
Line Total: USD 0.13 
Availability - 6549
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14550
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 2841
Multiples : 1
2841 : USD 0.0457
3000 : USD 0.0343
9000 : USD 0.0302
24000 : USD 0.0231

48
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 5
Multiples : 5
5 : USD 0.0768
50 : USD 0.0753
150 : USD 0.0741
500 : USD 0.073

6549
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.132
10 : USD 0.0902
100 : USD 0.0462
1000 : USD 0.0407
3000 : USD 0.0308
9000 : USD 0.0286
24000 : USD 0.0231

232800
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 9000
Multiples : 3000
9000 : USD 0.0235

14550
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 345
Multiples : 1
345 : USD 0.0457

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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We are delighted to provide the 2DC4617R-7-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2DC4617R-7-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2DC4617Q/R/S 50V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BV > 50V Case: SOT523 CEO I = 150mA High Collector Current Case Material: Molded Plastic. Green Molding Compound. C Ultra-Small Surface Mount Package UL Flammability Rating 94V-0 Complementary PNP Type Available (2DA1774Q/R/S) Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminals: FinishMatte Tin Plated Leads, Solderable per e3 Halogen and Antimony Free. Green Device (Note 3) MIL-STD-202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.002 grams (Approximate) C SOT523 B E Top View Device Symbol Pin-Out Top View Ordering Information (Note 4) Product Status Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel 2DC4617Q-7-F Active AEC-Q101 8D 7 8 3000 2DC4617R-7-F Active AEC-Q101 8E 7 8 3000 2DC4617S-7-F Active AEC-Q101 8F 7 8 3000 Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See 2DC4617Q/R/S Maximum Ratings TA = 25C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage 50 V V CEO Emitter-Base Voltage 7 V V EBO Collector CurrentContinuous (Note 5) 150 mA I C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) T = 25C P 150 mW A D Thermal Resistance, Junction to Ambient (Note 5) R 833 C/W JA Operating and Storage Temperature Range -55 to +150 C T , T J STG ESD Ratings (Note 6) Characteristic Symbol Value Unit JEDEC Class Electrostatic DischargeHuman Body Model ESD HBM 4000 V 3A Electrostatic DischargeMachine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead, on a minimum recommended pad layout of 1oz copper on a single-sided 1.6mm FR4 PCB. Device is measured under still air conditions whilst operating in a steady-state. 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Thermal Characteristics and Derating Information 250 100 200 Single Pulse 80 R (t) = r(t) * R JA JA R = 470C/W JA T - T = P * R (t) J A JA 150 60 Duty Cycle, D = t /t 12 100 40 50 20 R = 833C/W JA 0 0 0 100 200 0.0001 0.001 0.01 0.1 1 10 100 1,000 T , AMBIENT TEMPERATURE (C) A t , PULSE DURATION TIME (s) 1 Fig. 1 Power Dissipation Fig. 2 Single Pulse Maximum Power Dissipation vs. Ambient Temperature (Note 1) 2 of 6 July 2018 2DC4617Q/R/S Diodes Incorporated www.diodes.com Document number: DS30252 Rev. 10 - 2 P , POWER DISSIPATION (mW) D P(pk), PEAK TRANSIENT POWER (W)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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