PART OBSOLETE - USE FCX619 2DD1621T NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT89-3L Ideally Suited for Automated Assembly Processes Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Switching or Amplification Applications Moisture Sensitivity: Level 1 per J-STD-020 Lead Free By Design/RoHS Compliant (Note 1) Terminals: Finish Matte Tin annealed over Copper leadframe Gree Device (Note 2) (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.055 grams (approximate) 3 E COLLECTOR 2,4 C 4 2 C 1 BASE 1 B 3 EMITTER Top View Top View Device Schematic Pin Out Configuration Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage 30 V V CBO Collector-Emitter Voltage 25 V V CEO Emitter-Base Voltage 6.0 V V EBO Collector Current I 2.0 A C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 1 W A D Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C 125 C/W A R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at 2DD1621T Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V 30 V I = 10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 25 V I = 1mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 6.0 V I = 10A, I = 0 (BR)EBO C C Collector-Base Cutoff Current I 100 nA V = 20V, I = 0 CBO CB E Emitter-Base Cutoff Current 100 nA I V = 4.0V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) 400 200 V = 2.0V, I = 0.1A CE C DC Current Gain h FE 65 V = 2.0V, I = 1.5A CE C Collector-Emitter Saturation Voltage V 0.12 0.4 V I = 1.5A, I = 75mA CE(SAT) C B Base-Emitter Saturation Voltage V 0.9 1.2 V I = 1.5A, I = 75mA BE(SAT) C B SMALL SIGNAL CHARACTERISTICS V = 10V, I = 50mA, CE C Current Gain-Bandwidth Product 300 MHz f T f = 100MHz Output Capacitance 16 pF Cobo VCB = 10V, IE = 0, f = 1MHz SWITCHING CHARACTERISTICS Turn On Time 70 ns ton VCE = 12V, VBE = 5V, Storage Time 170 ns t stg I = I = 25mA, I = 500mA B1 B2 C Fall Time 25 ns t f Notes: 4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 1.0 3.0 2.5 0.8 2.0 0.6 1.5 0.4 1.0 R = 125C/W 0.2 JA 0.5 0 0 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (C) A Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 2 of 5 June 2021 2DD1621T Diodes Incorporated www.diodes.com Document number: DS31240 Rev. 3 - 4 OBSOLETE PART DISCONTINUED P , POWER DISSIPATION (W) D