X-On Electronics has gained recognition as a prominent supplier of 2DD1664P-13 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2DD1664P-13 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2DD1664P-13 Diodes Incorporated

2DD1664P-13 electronic component of Diodes Incorporated
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Part No.2DD1664P-13
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 32 V 1 A 280MHz 1 W Surface Mount SOT-89-3
Datasheet: 2DD1664P-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2184 ea
Line Total: USD 1.09 
Availability - 2402
Ship by Wed. 01 Jan to Mon. 06 Jan
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2402
Ship by Wed. 01 Jan to Mon. 06 Jan
MOQ : 5
Multiples : 5
5 : USD 0.2184
50 : USD 0.1788
150 : USD 0.1618
500 : USD 0.1357
2500 : USD 0.1263
5000 : USD 0.1207

99425
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.1258

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2DD1664P-13 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2DD1664P-13 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2DD1664P/Q/R 32V NPN SUFACE MOUNT TRANSISTOR IN SOT89 Features Mechanical Data Case: SOT89 BV > 32V CEO Max Continuous Current I = 1A Case Material: Molded Plastic. Green Molding Compound. C Epitaxial Planar Die Construction UL Flammability Rating 94V-0 Complementary PNP Type Available (2DB1132) Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Weight: 0.055 grams (Approximate) Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT89 C B E Top View Device Symbol Pin Out Top View Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel 2DD1664P-13 N13P 13 12 2,500 2DD1664Q-13 N13Q 13 12 2,500 2DD1664R-13 N13R 13 12 2,500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See 2DD1664P/Q/R Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 32 V CEO Emitter-Base Voltage 6 V V EBO Continuous Collector Current 1 A I C Peak Pulse Current (Note 6) 2 A I CM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 1 W P D Thermal Resistance, Junction to Ambient (Note 5) 125 R C/W JA Thermal Resistance, Junction to Leads (Note 7) 22 R C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 5. For a device surface mounted on FR-4 PCB with minimum suggested pad layout high coverage of single sided 1 oz copper, in still air conditions 6. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 1.0 0.8 0.6 0.4 0.2 0 0 25 50 150 75 100 125 T , AMBIENT TEMPERATURE (C) A Figure 1. Power Dissipation vs. Ambient Temperature 2 of 6 July 2012 2DD1664P/Q/R Diodes Incorporated www.diodes.com Document number: DS31143 Rev. 5 - 2 P , POWER DISSIPATION (W) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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