2DD2652 LOW V NPN SURFACE MOUNT TRANSISTOR CE(SAT) Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-323 Low Collector-Emitter Saturation Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideal for Low Power Amplification and Switching Moisture Sensitivity: Level 1 per J-STD-020D Complementary PNP Type Available (2DB1689) Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Ultra-Small Surface Mount Package Solderable per MIL-STD-202, Method 208 Lead Free By Design/RoHS Compliant (Note 1) Terminal Connections: See Diagram Green Devic (Note 2) Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) C B E Top View Device Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 15 V CBO Collector-Emitter Voltage 12 V V CEO Emitter-Base Voltage 6 V V EBO Collector Current - Continuous 1.5 A I C Peak Pulse Collector Current I 3 A CM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 300 mW A D 417 Thermal Resistance, Junction to Ambient (Note 3) T = 25C R C/W A JA Power Dissipation (Note 4) T = 25C P 500 mW A D Thermal Resistance, Junction to Ambient (Note 4) T = 25C 250 C/W A R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Conditions OFF CHARACTERISTICS Collector-Base Breakdown Voltage V 15 V I = 10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage (Note 5) V 12 V I = 1mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 6 V I = 10A, I = 0 (BR)EBO E C Collector Cut-Off Current I 0.1 A V = 15V, I = 0 CBO CB E Emitter Cut-Off Current 0.1 I A V = 6V, I = 0 EBO EB C ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage 80 200 mV V I = 500mA, I = 25mA CE(SAT) C B DC Current Gain 270 680 h V = 2V, I = 200mA FE CE C SMALL SIGNAL CHARACTERISTICS V = 10V, I = 0, CB E Output Capacitance C 11 pF obo f = 1MHz V = 2V, I = 100mA, CE C Current Gain-Bandwidth Product 260 MHz f T f = 100MHz Notes: 1. No purposefully added lead. 2. Diodes Inc.s Green policy can be found on our website at 2DD2652 0.6 1.8 1.6 0.5 1.4 I = 5mA B 0.4 1.2 I = 4mA B 1.0 I = 3mA B (Note 4) 0.3 0.8 I = 2mA B 0.2 (Note 3) 0.6 0.4 I = 1mA B 0.1 0.2 0 0 0 25 175 200 0 0.5 1 1.5 2 2.5 3 50 75 100 125 150 V , COLLECTOR-EMITTER VOLTAGE (V) T , AMBIENT TEMPERATURE (C) CE A Fig. 2 Typical Collector Current Fig. 1 Power Dissipation vs. Ambient Temperature vs. Collector-Emitter Voltage 1 1,000 T = 150C A I/I = 20 CB T = 85C A T = 25C A 0.1 T = -55C A T = 150C A T = 85C A 100 T = 25C A T = -55C A 0.01 V = 2V CE 0.001 10 0.1 1 10 100 1,000 10,000 0.1 1 10 100 1,000 10,000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Fig. 4 Typical Collector-Emitter Saturation Voltage Fig. 3 Typical DC Current Gain vs. Collector Current vs. Collector Current 1.2 1.2 I =/I 20 CB V = 2V CE 1.0 1.0 0.8 0.8 T = -55C A T = -55C A 0.6 0.6 T = 25C A T = 25C A T = 85C A 0.4 0.4 T = 85C A T = 150C A 0.2 0.2 T = 150C A 0 0 0.1 1 10 100 1,000 10,000 1 10 100 1,000 10,000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Fig. 5 Typical Base-Emitter Turn-On Voltage Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current vs. Collector Current 2 of 4 December 2008 2DD2652 Diodes Incorporated www.diodes.com Document number: DS31633 Rev. 2 - 2 NEW PRODUCT V , BASE-EMITTER TURN-ON VOLTAGE (V) h, DC CURRENT GAIN BE(ON) FE P , POWER DISSIPATION (W) D V, COLLECTOR-EMITTER CE(SAT) V , BASE-EMITTER SATURATION VOLTAGE (V) BE(SAT) I, COLLECTOR CURRENT (A) SATURATION VOLTAGE (V) C