X-On Electronics has gained recognition as a prominent supplier of 2N7002DW-7-F MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002DW-7-F MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7002DW-7-F Diodes Incorporated

2N7002DW-7-F electronic component of Diodes Incorporated
2N7002DW-7-F Diodes Incorporated
2N7002DW-7-F MOSFETs
2N7002DW-7-F  Semiconductors

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See Product Specifications
Part No. 2N7002DW-7-F
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: 60V 230mA 7.5O@5V,50mA 310mW 2 N-Channel SOT-363 MOSFETs ROHS
Surface mount PFET, 800mbar Rds(on) at 4.5V, 20V drain voltage, 2A continuous drain current.
Datasheet: 2N7002DW-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0574 ea
Line Total: USD 0.57 
Availability - 6857
Ship by Fri. 09 May to Wed. 14 May
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
480150
Ship by Fri. 02 May to Thu. 08 May
MOQ : 3636
Multiples : 3000
3636 : USD 0.0715
6000 : USD 0.0563
24000 : USD 0.0401

334650
Ship by Fri. 02 May to Thu. 08 May
MOQ : 6920
Multiples : 3000
6920 : USD 0.0376
9000 : USD 0.0367
12000 : USD 0.0364
30000 : USD 0.0342
45000 : USD 0.0335

6857
Ship by Fri. 09 May to Wed. 14 May
MOQ : 10
Multiples : 10
10 : USD 0.0574
100 : USD 0.046
300 : USD 0.0396
3000 : USD 0.0243
6000 : USD 0.022
9000 : USD 0.0208

229033
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 0.275
10 : USD 0.18
100 : USD 0.1188
500 : USD 0.0814
1000 : USD 0.0704
3000 : USD 0.055
6000 : USD 0.0473
24000 : USD 0.0451

2258
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 0.322
10 : USD 0.1722
100 : USD 0.1162
283 : USD 0.0658
778 : USD 0.0616

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N7002DW-7-F from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002DW-7-F and other electronic components in the MOSFETs category and beyond.

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1. The 2N7002DW-7-F is a N-channel Enhancement-mode Field-Effect Transistor (FET) manufactured by Diodes Incorporated. It is a uni-directional switch that is optimized for use as a low-side switch. 2. The device has a typical drain-source breakdown voltage (BSS) of 30V and a maximum drain current (ID) of 0.3A. It also has a low on-resistance of 60m? and has an RDS(on) (max) of 62m?. It is maximum VGS of ±20V and can operate at temperatures ranging from -55ºC to 150ºC.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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