NOT RECOMMENDED FOR NEW DESIGN USE DMN65D8LDW 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Dual N-Channel MOSFET I D V R Package (BR)DSS DS(ON) T = +25C A Low On-Resistance 8 V = 5V 170mA GS Low Gate Threshold Voltage 60V SOT363 6 V = 10V 200mA GS Low Input Capacitance Fast Switching Speed Small Surface Mount Package Description HBM Class 1C This new generation MOSFET is designed to minimize the on-state Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) resistance (R ) and yet maintain superior switching DS(ON) Halogen and Antimony Free. Green Device (Note 3) performance, making it ideal for high-efficiency power management Qualified to AEC-Q101 Standards for High Reliability applications. Mechanical Data Applications Case: SOT363 DC-DC Converters Case Material: Molded Plastic. Power Management Functions UL Flammability Classification Rating 94V-0 Battery Operated Systems and Solid-State Relays Moisture Sensitivity: Level 1 per J-STD-020 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe Memories, Transistors, etc (Lead Free Plating). Solderable per MIL-STD-202, Method 208 D G S SOT363 2 1 1 Terminal Connections: See Diagram Weight: 0.006 grams (approximate) S G D 2 2 1 HBM Class 1C Top View Top View Internal Schematic Ordering Information (Note 4 & 5) Part Number Compliance Case Packaging 2N7002DWA-7 Standard SOT363 3,000/Tape & Reel 2N7002DWA-13 Standard SOT363 10,000/Tape & Reel 2N7002DWAQ-7 Automotive SOT363 3,000/Tape & Reel 2N7002DWAQ-13 Automotive SOT363 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See 2N7002DWA Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 60 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 180 A Continuous Drain Current (Note 6) V = 10V I mA GS D State 140 T = +70C A Steady T = +25C A 150 mA Continuous Drain Current (Note 6) V = 5V I GS D State 120 T = +70C A Steady T = +25C 200 A Continuous Drain Current (Note 7) V = 10V I mA GS D State 160 T = +70C A Steady T = +25C 170 A mA Continuous Drain Current (Note 7) V = 5V I GS D State 140 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) 700 mA I DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 6) P 300 mW D Thermal Resistance, Junction to Ambient (Note 6) R 435 C/W JA Total Power Dissipation (Note 7) P 400 mW D Thermal Resistance, Junction to Ambient (Note 7) R 330 C/W JA Thermal Resistance, Junction to Case (Note 7) R 139 C/W JC Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1.0 A I V = 60V, V = 0V DSS DS GS Gate-Body Leakage 5 A I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 0.8 2.5 V V V = V , I = 250A GS(th) DS GS D 8 V = 5.0V, I = 0.115A GS D Static Drain-Source On-Resistance RDS(ON) 6 V = 10.0V, I = 0.115A GS D Forward Transconductance g 80 mS V = 10V, I = 0.115A FS DS D Diode Forward Voltage V 0.8 1.2 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 22.0 iss Output Capacitance 3.2 pF Coss VDS = 25V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance 2.0 C rss Gate Resistance 88 R V = 0V, V = 0V, f = 1.0MHz G DS GS 0.87 Total Gate Charge V = 10V Q GS g 0.43 Total Gate Charge V = 4.5V Q V = 10V, V = 30V, GS g GS DS nC Gate-Source Charge Q 0.11 I = 150mA gs D Gate-Drain Charge Q 0.11 gd Turn-On Delay Time t 3.3 D(on) Turn-On Rise Time t 3.2 r V = 30V, I = 0.115A, V = 10V DD D GEN , nS Turn-Off Delay Time t 12.0 R = 25 D(off) GEN Turn-Off Fall Time 6.3 t f Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 5 2N7002DWA January 2015 Diodes Incorporated www.diodes.com Document number: DS36120 Rev. 7 - 3 NEW PRODUCT