AC857CWQ 45V PNP SMALL SIGNAL TRANSISTOR IN SOT323 Description Mechanical Data Case: SOT323 AC857CWQ Bipolar Junction Transistor (BJT) is designed to meet the Case Material: Molded Plastic, Green Molding compound stringent requirements of Automotive Applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: Finish Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Ideally Suited for Automatic Insertion Weight: 0.006 grams (Approximate) Complementary NPN Types Available (AC847CWQ) For switching and AF Amplifier Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.Gree Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT323 C B E Top View Device Symbol Top View Pin-Out Ordering Information (Notes 4 & 5) Product Compliance Marking Reel Size (inches) Quantity per Reel AC857CWQ-7 Automotive 2D7 7 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See AC857CWQ Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -50 V V CBO Collector-Emitter Voltage -45 V V CEO Emitter-Base Voltage V -5.0 V EBO Continuous Collector Current I -100 mA C Peak Collector Current I -200 mA CM Peak Emitter Current I -200 mA EM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) 200 mW P D Thermal Resistance, Junction to Ambient (Note 6) 625 R C/W JA Operating and Storage Temperature Range -65 to +150 T , T C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV -50 - - V I = -100nA CBO C Collector-Emitter Breakdown Voltage (Note 7) BV -45 - - V I = -10mA CEO C Emitter-Base Breakdown Voltage -5 - - V BVEBO IE = -100nA DC Current Gain (Note 7) 420 520 800 - h V = -5.0V, I = -2.0mA FE CE C -15 nA V = -30V CB Collector Cutoff Current I - - CBO -4 A V = -30V, T = +150C CB A -75 -300 I = -10mA, I = -0.5mA C B Collector-Emitter Saturation Voltage (Note 7) V - mV CE(sat) -250 -650 I = -100mA, I = -5.0mA C B -600 -650 -750 I = -2mA, V = -5V C CE Base-Emitter Turn-On Voltage (Note 7) mV V BE(on) - - -820 I = -10mA, V = -5V C CE -700 - I = -10mA, I = -0.5mA C B Base-Emitter Saturation Voltage (Note 7) - mV V BE(sat) -850 -950 I = -100mA, I = -5mA C B Output Capacitance - 3 4.5 pF Cobo VCB = -10V, f = 1.0MHz V = -5V, I = -10mA, CE C Transition Frequency f 100 200 - MHz T f = 100MHz V = -5V, I = -200A CE C Noise Figure NF - - 10 dB R = 2k, f = 1kHz S f = 200Hz Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 7. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2% 2 of 5 AC857CWQ September 2017 Diodes Incorporated www.diodes.com Document Number: DS39667 Rev. 1 - 2