X-On Electronics has gained recognition as a prominent supplier of APT13003NZTR-G1 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. APT13003NZTR-G1 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

APT13003NZTR-G1 Diodes Incorporated

APT13003NZTR-G1 electronic component of Diodes Incorporated
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See Product Specifications
Part No.APT13003NZTR-G1
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 530V NPN HV Trans 900Vces 10Vebo 1.5A
Datasheet: APT13003NZTR-G1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.0177
10 : USD 0.7341
100 : USD 0.4572
500 : USD 0.3129
1000 : USD 0.2407
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.6673
10 : USD 0.4998
100 : USD 0.2884
500 : USD 0.1975
1000 : USD 0.1526
2000 : USD 0.1284
10000 : USD 0.1116
24000 : USD 0.1047
50000 : USD 0.1024
N/A

Obsolete
0
MOQ : 5
Multiples : 1
5 : USD 0.1882
25 : USD 0.1422
100 : USD 0.1251
136 : USD 0.1027
374 : USD 0.0974
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
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Hts Code
Mxhts
Product Type
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We are delighted to provide the APT13003NZTR-G1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT13003NZTR-G1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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APT13003NZ 530V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO92 Features Mechanical Data BV > 530V CEO Case: TO92 BV > 900V CES Case Material: Molded Plastic,Gree Molding Compound UL BV > 10V EBO Flammability Classification Rating 94V-0 I = 1.5A high Continuous Collector Current C Terminals: Matte Tin Finish Solderable per MIL-STD-202, High Switching Speed Method 208 Lead-Free Finish RoHS Compliant (Notes 1 & 2) Weight: 200mg (Approximate) Halogen and Antimony Free. Green Device (Note 3) Applications Low Power AC-DC SMPS for: Battery Chargers for Mobile Phone / Tablets / Smartphones Power Supply for DVD / STB LED Lighting C TO92 B B C E E C B Bottom View Flat Face View E Pin-Out Device Schematic Ordering Information (Note 4) Product Package Marking Quantity APT13003NZTR-G1 TO92 (Joggled Legs) 13003NZ-G1 2,000 Taped, per Ammo Box Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See APT13003NZ Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Emitter Voltage (V = 0V) V 900 V BE CES Collector-Emitter Voltage V 530 V CEO Emitter-Base Voltage 10 V V EBO Continuous Collector Current 1.5 A I C Peak Pulse Collector Current I 3 A CM Continuous Base Current I 0.75 A B Peak Pulse Base Current I 1.5 A BM Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation P 1.0 W D Thermal Resistance, Junction to Ambient Air 125 C/W RJA Thermal Resistance, Junction to Case 83.3 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG ESD Ratings (Note 5) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C Note: 5. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 APT13003NZ July 2015 Diodes Incorporated www.diodes.com Document number: DS37774 Rev. 1 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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