X-On Electronics has gained recognition as a prominent supplier of APT13005DT-G1 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. APT13005DT-G1 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

APT13005DT-G1 Diodes Incorporated

APT13005DT-G1 electronic component of Diodes Incorporated
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See Product Specifications
Part No.APT13005DT-G1
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT 450V NPN High Volt PWR Trans 450BVceo
Datasheet: APT13005DT-G1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1000
Multiples : 1000
1000 : USD 0.4536
2000 : USD 0.4135
5000 : USD 0.4062
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the APT13005DT-G1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT13005DT-G1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PART OBSOLETE CONTACT US APT13005D Green 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data BV > 450V CEO Case: ITO220AB TYPE BR (TO220F), TO220AB Type C BV > 700V CES Case Material: Molded Plastic,Gree Molding Compound BV > 9V EBO UL Flammability Classification Rating 94V-0 I = 4A High Collector Current C Terminals: Finish - Matte Tin Finish Leads, Solderable per Integrated Anti-Parallel Diode to act as free-wheeling diode MIL-STD-202, Method 208 Anti-Saturation feature Weight: ITO220AB TYPE BR (TO220F): 1500mg (Approximate) Lead-Free Finish RoHS Compliant (Notes 1 & 2) TO220AB Type C : 2000mg (Approximate) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. APT13005D Marking Information ITO220AB TYPE TO220AB Type C BR (TO220F) = Manufacturers code marking For ITO220AB TYPE BR (TO220F), APT13005DTF-G1 = Product Type Marking ID For TO220AB Type C, APT13005DT-G1 = Product Type Marking ID APT13005 APT13005 YWW = Date Code Marking DTF-G1 e.g. 312 = Year 2013, Week 12. YWW8XX DT-G1 8 = Assembly site code YWW8XX XX = Batch Number Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Emitter Voltage V 700 V CES Collector-Emitter Voltage V 450 V CEO Emitter-Base Voltage V 9 V EBO Collector Current 4 A I C Peak Collector Current 8 A I CM Base Current 2 A I B Peak Base Current 4 A I BM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit For ITO220AB TYPE BR 28 (TO220F) W Power Dissipation T = +25C P C D For TO220AB Type C 75 For ITO220AB TYPE BR 4.5 (TO220F) Thermal Resistance, Junction to Case C/W R JC For TO220AB Type C 1.67 Operating and Storage Temperature Range T T -65 to +150 C J, STG ESD Ratings (Note 5) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C Note: 5. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 June 2021 APT13005D Diodes Incorporated www.diodes.com Datasheet Number: DS36463 Rev. 3 - 4 OBSOLETE PART DISCONTINUED

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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